Schottky Rectifier FUXINSEMI SS14 with Metal Silicon Junction and RoHS 2.0 Compliance Certification

Key Attributes
Model Number: SS14
Product Custom Attributes
Reverse Leakage Current (Ir):
500uA@40V
Voltage - DC Reverse (Vr) (Max):
40V
Diode Configuration:
Independent
Voltage - Forward(Vf@If):
550mV@1A
Current - Rectified:
1A
Mfr. Part #:
SS14
Package:
SMA(DO-214AC)
Product Description

Product Overview

The SS12 THRU SS120 A series are Surface Mount Schottky Barrier Rectifiers designed for applications requiring voltage ratings from 20V to 200V. These rectifiers feature a metal silicon junction for majority carrier conduction, resulting in low power loss and high efficiency. They are ideal for surface mounted applications, offering built-in strain relief for automated placement and high forward surge current capability. The devices are compliant with RoHS 2.0 and can withstand high temperature soldering.

Product Attributes

  • Brand: Fuxin (implied by www.fuxinsemi.com)
  • Package Type: JEDEC DO-214AC (SMA)
  • Material: Metal silicon junction
  • Compliance: RoHS 2.0
  • Flammability Classification: Underwriters Laboratory 94V-0

Technical Specifications

Parameter Symbol SS12 SS13 SS14 SS15 SS16 SS18 SS110 SS115 SS120 Units
Maximum repetitive peak reverse voltage VRRM 20 30 40 50 60 80 100 150 200 V
Maximum RMS voltage VRMS 14 21 28 35 42 56 70 105 140 V
Maximum DC blocking voltage VDC 20 30 40 50 60 80 100 150 200 V
Maximum average forward rectified current at TL(see fig.1) I(AV) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 A
Peak forward surge current 8.3ms single half sine-wave superimposed on rated load IFSM 30.0 30.0 30.0 30.0 30.0 30.0 30.0 30.0 30.0 A
Maximum instantaneous forward voltage at 1.0A VF 0.55 0.55 0.55 0.55 0.55 0.55 0.55 0.95 0.95 V
Maximum instantaneous forward voltage at 1.0A (for SS115, SS120) VF - - - - - - - 0.95 0.95 V
Maximum DC reverse current TA=25 C at rated DC blocking voltage IR 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 mA
Maximum DC reverse current TA=100 C at rated DC blocking voltage IR 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 mA
Typical junction capacitance (NOTE 1) CJ 10.0 10.0 10.0 10.0 10.0 10.0 10.0 10.0 10.0 pF
Typical thermal resistance (NOTE 2) RJA 90 90 90 90 90 90 90 90 90 C/W
Operating junction temperature range TJ, TSTG -55 to +125 -55 to +125 -55 to +125 -55 to +125 -55 to +125 -55 to +125 -55 to +125 -55 to +125 -55 to +125 C
Storage temperature range TJ, TSTG -55 to +150 -55 to +150 -55 to +150 -55 to +150 -55 to +150 -55 to +150 -55 to +150 -55 to +150 -55 to +150 C
Dimensions (SMA-W/DO-214AC)
Dimension A 0.177(4.50) 0.177(4.50) 0.177(4.50) 0.177(4.50) 0.177(4.50) 0.177(4.50) 0.177(4.50) 0.177(4.50) 0.177(4.50) (mm)
Dimension B 0.110(2.80) 0.110(2.80) 0.110(2.80) 0.110(2.80) 0.110(2.80) 0.110(2.80) 0.110(2.80) 0.110(2.80) 0.110(2.80) (mm)
Dimension C 0.067(1.70) 0.067(1.70) 0.067(1.70) 0.067(1.70) 0.067(1.70) 0.067(1.70) 0.067(1.70) 0.067(1.70) 0.067(1.70) (mm)
Dimension D 0.047(1.20) 0.047(1.20) 0.047(1.20) 0.047(1.20) 0.047(1.20) 0.047(1.20) 0.047(1.20) 0.047(1.20) 0.047(1.20) (mm)
Dimension E 0.096(2.45) 0.096(2.45) 0.096(2.45) 0.096(2.45) 0.096(2.45) 0.096(2.45) 0.096(2.45) 0.096(2.45) 0.096(2.45) (mm)
Dimension F 0.060(1.52) 0.060(1.52) 0.060(1.52) 0.060(1.52) 0.060(1.52) 0.060(1.52) 0.060(1.52) 0.060(1.52) 0.060(1.52) (mm)
Dimension G 0.030(0.76) 0.030(0.76) 0.030(0.76) 0.030(0.76) 0.030(0.76) 0.030(0.76) 0.030(0.76) 0.030(0.76) 0.030(0.76) (mm)
Dimension H 0.222(5.66) 0.222(5.66) 0.222(5.66) 0.222(5.66) 0.222(5.66) 0.222(5.66) 0.222(5.66) 0.222(5.66) 0.222(5.66) (mm)
Dimension I 0.191(4.85) 0.191(4.85) 0.191(4.85) 0.191(4.85) 0.191(4.85) 0.191(4.85) 0.191(4.85) 0.191(4.85) 0.191(4.85) (mm)
Dimension J 0.012(0.305) 0.012(0.305) 0.012(0.305) 0.012(0.305) 0.012(0.305) 0.012(0.305) 0.012(0.305) 0.012(0.305) 0.012(0.305) (mm)
Dimension K 0.006(0.152) 0.006(0.152) 0.006(0.152) 0.006(0.152) 0.006(0.152) 0.006(0.152) 0.006(0.152) 0.006(0.152) 0.006(0.152) (mm)
Dimension L 0.008(0.203)MAX. 0.008(0.203)MAX. 0.008(0.203)MAX. 0.008(0.203)MAX. 0.008(0.203)MAX. 0.008(0.203)MAX. 0.008(0.203)MAX. 0.008(0.203)MAX. 0.008(0.203)MAX. (mm)
Dimension M 0.096(2.42) 0.096(2.42) 0.096(2.42) 0.096(2.42) 0.096(2.42) 0.096(2.42) 0.096(2.42) 0.096(2.42) 0.096(2.42) (mm)
Dimension N 0.075(1.90) 0.075(1.90) 0.075(1.90) 0.075(1.90) 0.075(1.90) 0.075(1.90) 0.075(1.90) 0.075(1.90) 0.075(1.90) (mm)

Notes:
1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2. P.C.B. mounted with 2.0x2.0''(5.0x5.0cm) copper pad areas


2304140030_FUXINSEMI-SS14_C908232.pdf

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