MMBT2222A NPN transistor offering performance for switching and amplification in electronic circuits
Key Attributes
Model Number:
MMBT2222A
Product Custom Attributes
Current - Collector Cutoff:
10nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
300MHz
Type:
NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
MMBT2222A
Package:
SOT-23
Product Description
MMBT2222A NPN TRANSISTOR
The MMBT2222A is an NPN epitaxial planar die construction transistor. It features a complementary PNP type available (MMBT2907A) and is marked with '1P'. This transistor is suitable for various electronic applications requiring amplification and switching.
Product Attributes
- Marking Type: MMBT2222A
- Marking Code: 1P
- Complementary PNP Type: MMBT2907A
Technical Specifications
| Symbol | Parameter | Test conditions | Min | Typ | Max | Unit |
| VCBO | CollectorBase Voltage | IC = 10uA, IE = 0 | 75 | V | ||
| VCEO | CollectorEmitter Voltage | IC = 10 mA, IB = 0 | 40 | V | ||
| VEBO | EmitterBase Voltage | IE = 10uA, IC = 0 | 6 | V | ||
| IC | Collector Current Continuous | 600 | mA | |||
| PC | Collector Power Dissipation | (Ta=25 unless otherwise noted) | 300 | mW | ||
| RthJA | Thermal Resistance From Junction To Ambient | 417 | /W | |||
| TJ,Tstg | Operation Junction and Storage Temperature Range | -55 | +150 | |||
| V(BR)CBO | Collector-base breakdown voltage | VCB = 60V, IE = 0 | 75 | V | ||
| V(BR)CEO | Collector-emitter breakdown voltage | VCE = 40V, IB = 0 | 40 | V | ||
| V(BR)EBO | Emitter-base breakdown voltage | VEB = 6V, IC =0 | 6 | V | ||
| ICBO | Collector cut-off current | VCB = 60V, IE = 0 | 10 | uA | ||
| ICEX | Collector cut-off current | VCE = 30V, BE(off) = -0.5V | 0.01 | uA | ||
| IEBO | Emitter cut-off current | VEB = 3V, IC =0 | 0.01 | uA | ||
| hFE1 | DC current gain | VCE = 10V, IC = 0.1mA | 100 | |||
| hFE2 | DC current gain | VCE = 10V, IC = 150mA, IB = 15mA | 300 | |||
| hFE3 | DC current gain | VCE = 10V, IC = 500mA, IB = 50mA | 42 | |||
| VCE(sat) | Collector-emitter saturation voltage | IC = 150mA, IB = 15mA | 0.2 | 0.3 | V | |
| VBE(sat) | Base-emitter saturation voltage | IC = 150mA, IB = 15mA | 0.9 | 1.2 | V | |
| fT | Transition frequency | VCE = 20V, IC = 20mA, f=100MHz | 225 | MHz | ||
| td | Delay time | VCC = 30V, IC = 150mA, Ib1=15mA, Ib2=-15mA | 10 | ns | ||
| tr | Rise time | VCC = 30V, IC = 150mA, Ib1=15mA, Ib2=-15mA | 25 | ns | ||
| ts | Storage time | VCC = 30V, IC = 150mA, Ib1=15mA, Ib2=-15mA | 60 | ns | ||
| tf | Fall time | VCC = 30V, IC = 150mA, Ib1=15mA, Ib2=-15mA | 300 | ns | ||
| Cib | Input capacitance | VCB = 10V, f=1MHz, IE=0 | 100 | pF | ||
| Cob | Output capacitance | VEB = 3V, f=1MHz, IC=0 | 100 | pF |
2410121953_GOODWORK-MMBT2222A_C909758.pdf
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