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quality Low forward voltage drop Schottky diode FUXINSEMI 1N5824 with solderable leads per MIL STD 202 Method 208 factory
quality Low forward voltage drop Schottky diode FUXINSEMI 1N5824 with solderable leads per MIL STD 202 Method 208 factory

Low forward voltage drop Schottky diode FUXINSEMI 1N5824 with solderable leads per MIL STD 202 Method 208

Key Attributes
Model Number: 1N5824
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
150A
Reverse Leakage Current (Ir):
500uA@30V
Operating Junction Temperature Range:
-55℃~+150℃
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
30V
Voltage - Forward(Vf@If):
550mV@5A
Current - Rectified:
5A
Mfr. Part #:
1N5824
Package:
DO-201AD
Product Description

Product Overview

The 1N5823, 1N5824, and 1N5825 are axial-leaded Schottky barrier rectifiers designed for through-hole applications. These devices offer low power loss and high efficiency due to their high current capability and low forward voltage drop. They feature a guardring for overvoltage protection and ultra-high-speed switching. Constructed with a silicon epitaxial planar chip and metal silicon junction, these rectifiers are suitable for applications requiring high surge capability and reliable performance. Lead-free parts meet environmental standards of MIL-STD-19500/228.

Product Attributes

  • Brand: Fuxin (implied by website URL)
  • Chip Type: Silicon epitaxial planar chip, metal silicon junction
  • Flame Retardant: UL94-V0 rated epoxy
  • Lead Material: Solderable per MIL-STD-202, Method 208
  • Environmental Standards: Lead-free parts meet MIL-STD-19500/228
  • Polarity: Color band denotes cathode end
  • Mounting Position: Any

Technical Specifications

Model VRRM (V) VRMS (V) VDC (V) I(AV) (A) IFSM (A) VF (V) IR (mA) RJA (C/W) CJ (pF) TJ, TSTG (C)
1N5823 20 14 20 5.0 150.0 0.55 0.5 20.0 380 -55 to +150
1N5824 30 21 30
1N5825 40 28 40
Notes:
1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2. Thermal resistance from junction to ambient at 0.375(9.5mm) lead length, P.C.B. mounted.
Parameter Conditions
Maximum instantaneous forward voltage At 5.0A, TJ=25 C
Maximum DC reverse current At rated DC blocking voltage, TA=25 C
Maximum DC reverse current At rated DC blocking voltage, TA=100 C
Typical junction capacitance NOTE 1
Typical thermal resistance NOTE 2
Operating junction temperature range
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current 0.375(9.5mm) lead length (see fig.1)
Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method)

Package Outline: DO-201AD/DO-27

Dimensions (in inches and (millimeters)):

  • Length: 0.94(24.0) MIN.
  • Body Diameter: .375(9.5) to .285(7.2) DIA.
  • Lead Diameter: .051(1.30) to .043(1.10) DIA.
  • Lead Length: .220(5.6) to .197(5.0) DIA. (This seems to be a typo in the source, likely referring to lead length from the body)

Marking Code:

  • 1N5823: 1N5823
  • 1N5824: 1N5824
  • 1N5825: 1N5825

2309041613_FUXINSEMI-1N5824_C7503125.pdf

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