Metal silicon junction Schottky diode FUXINSEMI SS16A surface mount rectifier with RoHS 2.0 compliance
Key Attributes
Model Number:
SS16A
Product Custom Attributes
Reverse Leakage Current (Ir):
100uA@60V
Voltage - DC Reverse (Vr) (Max):
60V
Diode Configuration:
Independent
Voltage - Forward(Vf@If):
700mV@1A
Current - Rectified:
1A
Mfr. Part #:
SS16A
Package:
SMA(DO-214AC)
Product Description
Product Overview
The SS12A thru SS120A series are surface mount Schottky barrier rectifiers offering a voltage range from 20V to 200V. These rectifiers are designed for surface mounted applications, featuring built-in strain relief for automated placement. They provide high forward surge current capability and high-temperature soldering performance, guaranteed at 260C for 10 seconds at the terminals. Constructed with a metal silicon junction and majority carrier conduction, they offer low power loss and high efficiency. These rectifiers are compliant with RoHS 2.0 standards.
Product Attributes
- Brand: Fuxinsemi
- Package: SMA/DO-214AC
- Material: Metal silicon junction
- Conduction: Majority carrier
- Certifications: RoHS 2.0 compliant, Halogen-free option available (suffix "-H")
- Flammability Classification: UL 94V-0
Technical Specifications
| Parameter | Symbol | SS12A | SS13A | SS14A | SS15A | SS16A | SS18A | SS110A | SS115A | SS120A | Units |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Maximum repetitive peak reverse voltage | VRRM | 20 to 200 | V | ||||||||
| Maximum RMS voltage | VRMS | 14 to 140 | V | ||||||||
| Maximum DC blocking voltage | VDC | 20 to 200 | V | ||||||||
| Maximum average forward rectified current at TL (see fig.1) | I(AV) | 1.0 | 1.0 | 1.0 | 1.0 | 1.0 | 1.0 | 1.0 | 1.0 | 1.0 | A |
| Peak forward surge current 8.3ms single half sine-wave superimposed on rated load | IFSM | 30.0 | 30.0 | 30.0 | 35.0 | 40.0 | 50.0 | 60.0 | 105.0 | 140.0 | A |
| Maximum instantaneous forward voltage at 1.0A | VF | 0.55 | 0.55 | 0.55 | 0.70 | 0.70 | 0.85 | 0.85 | 0.95 | 0.95 | V |
| Maximum DC reverse current TA=25 C at rated DC blocking voltage | IR | 0.1 | 0.1 | 0.1 | 0.1 | 0.1 | 0.1 | 0.1 | 0.1 | 0.1 | mA |
| Maximum DC reverse current TA=100 C at rated DC blocking voltage | IR | 5.0 | 5.0 | 5.0 | 5.0 | 5.0 | 5.0 | 5.0 | 5.0 | 5.0 | mA |
| Typical junction capacitance (NOTE 1) | CJ | 20 | 21 | 28 | 35 | 42 | 56 | 70 | 105 | 140 | pF |
| Typical thermal resistance (NOTE 2) | RJA | 90 | C/W | ||||||||
| Operating junction temperature range | TJ | -55 to +150 | C | ||||||||
| Storage temperature range | TSTG | -55 to +125 | C | ||||||||
Dimensions (SMA/DO-214AC):
- Package Outline: 0.177(4.50) x 0.108(2.75) inches (mm)
- Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
- Polarity: Color band denotes cathode end
- Mounting Position: Any
Marking Code:
| Type Number | Marking Code |
|---|---|
| SS12A | SS12 |
| SS13A | SS13 |
| SS14A | SS14 |
| SS15A | SS15 |
| SS16A | SS16 |
| SS18A | SS18 |
| SS110A | SS110 |
| SS115A | SS115 |
| SS120A | SS120 |
Soldering Conditions:
Reflow soldering:
- Average ramp-up rate (Tsmin to Tsmax): <3 C/sec
- Preheat Temperature (Tsmin): 150 C
- Preheat Temperature (Tsmax): 200 C
- Time (tsmin to tsmax): 60~120 sec
- Ramp-up Rate (Tsmax to TL): <3 C/sec
- Time maintained above: Temperature (TL) 217 C, Time (tL) 60~260 sec
- Peak Temperature (TP): 255 +0/-5 C
- Time within 5 C of actual Peak Temperature (tP): 10~30 sec
- Ramp-down Rate: <6 C/sec
- Time 25 C to Peak Temperature: <6 minutes
Storage Environment: Temperature=5 ~40 C, Humidity=55%25%
2108072030_FUXINSEMI-SS16A_C2844170.pdf
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