Versatile PNP Silicon Transistor GOODWORK S9015 for General Purpose Amplification and Switching Needs

Key Attributes
Model Number: S9015
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
150MHz
Type:
PNP
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
S9015
Package:
SOT-23
Product Description

S9015 General Purpose Transistor PNP Silicon

The S9015 is a PNP silicon general-purpose transistor, complementary to the S9014. It is designed for various electronic applications requiring reliable amplification and switching capabilities.

Product Attributes

  • Type: PNP Silicon Transistor
  • Marking Code: M6
  • Complementary to: S9014

Technical Specifications

Characteristic Symbol Min Max Unit Conditions
CollectorEmitter Voltage VCEO -45 Vdc
CollectorBase Voltage VCBO -50 Vdc
EmitterBase Voltage VEBO -5.0 Vdc
Collector Current Continuous IC -100 mAdc
Total Device Dissipation (FR5 Board) PD 200 mW (TA = 25C)
Junction and Storage Temperature TJ,Tstg 55 +150 C
CollectorEmitter Breakdown Voltage V(BR)CEO 45 Vdc (IC = -0.1 mAdc, IB = 0)
CollectorBase Breakdown Voltage V(BR)CBO 50 Vdc (IC = -100 Adc, IE = 0)
EmitterBase Breakdown Voltage V(BR)EBO 5.0 Vdc (IE = -100 Adc, IC = 0)
Collector cut-off current ICBO -0.1 uAdc (VCB=-50 Vdc, IE = 0)
Emitter cut-off current IEBO -0.1 uAdc (VEB = -5Vdc, IC = 0)
DC Current Gain hFE 200-1000 (IC =-1.0 mAdc, VCE =-5 Vdc)
CollectorEmitter Saturation Voltage VCE(sat) -0.3 Vdc (IC = -100 mAdc, IB = -10 mAdc)
BaseEmitter Saturation Voltage VBE(sat) -1.0 Vdc (IC = -100 mAdc, IB = -10mAdc)
CurrentGain Bandwidth Product fT 150 MHz (IC = -10mAdc, VCE= -5.0Vdc, f =30MHz)

2410122003_GOODWORK-S9015_C2943859.pdf

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