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quality Silicon Carbide Schottky Rectifier FUXINSEMI F4C05120A Designed for Switching and Thermal Management factory
quality Silicon Carbide Schottky Rectifier FUXINSEMI F4C05120A Designed for Switching and Thermal Management factory

Silicon Carbide Schottky Rectifier FUXINSEMI F4C05120A Designed for Switching and Thermal Management

Key Attributes
Model Number: F4C05120A
Product Custom Attributes
Reverse Leakage Current (Ir):
20uA@1.2kV
Voltage - DC Reverse (Vr) (Max):
1.2kV
Diode Configuration:
Independent
Voltage - Forward(Vf@If):
1.4V@5A
Current - Rectified:
19A
Mfr. Part #:
F4C05120A
Package:
TO-220-2
Product Description

Product Overview

The F4C05120A is a Silicon Carbide Schottky Diode designed for high-frequency operation with zero reverse recovery current and temperature-independent switching. Its key benefits include essentially no switching losses, higher efficiency, and reduced heat sink requirements, making it ideal for replacing bipolar rectifiers with unipolar ones. This diode is suitable for demanding applications such as Switch Mode Power Supplies (SMPS), boost diodes in PFC or DC/DC stages, free-wheeling diodes in inverter stages, and AC/DC converters.

Product Attributes

  • Brand: Fuxin Semiconductor
  • Material: Silicon Carbide (SiC)
  • Diode Type: Schottky Rectifier
  • Package: TO-220-2 (TO-220AC)
  • Certifications: Pb e3

Technical Specifications

Part Number Package Marking VRRM (V) VRSM (V) VR (V) IF (A) IFRM (A) IFSM (A) IF,Max (A) Ptot (W) dV/dt (V/ns) idt (As) TJ (C) Tstg (C) Mounting Torque (Nm) RJC (C/W) VF (V) IR (A) QC (nC) C (pF) EC (J)
F4C05120A C05120A 1200 1300 1200 19 (TC=25C), 9.5 (TC=135C), 5 (TC=161C) 26 (TC=25C, tP=10ms), 18 (TC=110C, tP=10ms) 46 (TC=25C, tP=10ms), 36 (TC=110C, tP=10ms) 400 (TC=25C, tP=10ms), 320 (TC=110C, tP=10ms) 100 (TC=25C), 43 (TC=110C) 200 10.6 (TC=25C, tP=10ms), 6.5 (TC=110C, tP=10ms) -55 to +175 -55 to +135 1 (M3 Screw), 8.8 (6-32 Screw) 1.50 1.4 (Typ, IF=5A, TJ=25C), 1.9 (Max, IF=5A, TJ=25C), 1.8 (Typ, IF=5A, TJ=175C) 20 (Typ, VR=1200V, TJ=25C), 40 (Max, VR=1200V, TJ=25C), 150 (Typ, VR=1200V, TJ=175C), 300 (Max, VR=1200V, TJ=175C) 27 (VR=800V, IF=5A, di/dt=200A/s, TJ=25C) 390 (VR=0V, TJ=25C, f=1MHz), 27 (VR=400V, TJ=25C, f=1MHz), 20 (VR=800V, TJ=25C, f=1MHz) 8.0 (VR=800V)

Package Dimensions (TO-220-2 / TO-220AC)

Symbol Inches (Min) Inches (Max) Millimeters (Min) Millimeters (Max)
A .381 .410 9.677 10.414
B .232 .272 5.900 6.900
C .100 .120 2.540 3.048
D .223 .337 5.664 8.560
D1 .457 .490 11.60 12.45
D2 .277 .303 7.04 7.70
D3 .244 .252 6.22 6.4
E .587 .638 14.900 16.200
E1 .302 .326 7.68 8.28
E2 .227 .251 5.77 6.37
F .143 .153 3.632 3.886
G 1.105 1.147 28.067 29.134
H .500 .550 12.700 13.970
L .025 .036 .635 .914
M .045 .055 1.143 1.550
N .195 .205 4.953 5.207
P .165 .185 4.191 4.699
Q .048 .054 1.219 1.372
S 3 6 3 6
T 3 6 3 6
U 3 6 3 6
V .094 .110 2.388 2.794
W .014 .025 .356 .635
X 3 5.5 3 5.5
Y .385 .410 9.779 10.414
z .130 .150 3.302 3.810

2409302332_FUXINSEMI-F4C05120A_C784610.pdf

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