N channel MOSFET FUXINSEMI AZ23C33 providing fast switching and low conduction losses for industrial
Key Attributes
Model Number:
AZ23C33
Product Custom Attributes
Operating Junction Temperature Range:
-65℃~+150℃
Impedance(Zzt):
80Ω
Diode Configuration:
1 Pair Common Anode
Pd - Power Dissipation:
300mW
Zener Voltage(Range):
31V~35V
Zener Voltage(Nom):
33V
Impedance(Zzk):
250Ω
Mfr. Part #:
AZ23C33
Package:
SOT-23
Product Description
Product Overview
The FX10N05 is a high-performance N-channel enhancement mode power MOSFET designed for various applications. It offers low on-resistance, fast switching speed, and excellent thermal performance, making it suitable for power management, motor control, and switching power supply applications.
Product Attributes
- Brand: FUXIN
- Origin: China
Technical Specifications
| Parameter | FX10N05 |
| Drain-Source Voltage (VDS) | 50V |
| Continuous Drain Current (ID) | 100A |
| Pulsed Drain Current (IDM) | 400A |
| Gate-Source Voltage (VGS) | ±20V |
| Total Power Dissipation (PD) | 250W |
| RDS(ON) @ VGS = 10V, ID = 50A | 5.0mΩ |
| RDS(ON) @ VGS = 4.5V, ID = 50A | 6.0mΩ |
| Operating Junction Temperature (TJ) | -55 to +175°C |
| Storage Temperature (TSTG) | -55 to +175°C |
| Typical Gate Charge (QG) | 120nC |
| Typical Output Capacitance (COSS) | 1200pF |
| Typical Input Capacitance (CISS) | 2800pF |
| Typical Reverse Transfer Capacitance (CRSS) | 300pF |
| Package | TO-220 |
2409302333_FUXINSEMI-AZ23C33_C5563720.pdf
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