High Reliability Surface Mount Rectifier FUXINSEMI DHE1M with JEDEC SOD123 Package and Surge Current
Key Attributes
Model Number:
DHE1M
Product Custom Attributes
Reverse Leakage Current (Ir):
5uA
Non-Repetitive Peak Forward Surge Current:
25A
Reverse Recovery Time (trr):
75ns
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
1kV
Current - Rectified:
1A
Mfr. Part #:
DHE1M
Package:
SOD-123
Product Description
Product Overview
The DHE1A through DHE1M series are surface mount, high-efficiency rectifiers designed for 50V to 1000V applications. These devices feature a glass-passivated chip junction, built-in strain relief for automated placement, and high forward surge current capability. They are ideal for applications requiring low reverse leakage and high-temperature soldering. The JEDEC SOD-123 molded plastic package offers excellent reliability for various surface-mounted scenarios.
Product Attributes
- Case: JEDEC SOD-123 molded plastic body
- Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
- Polarity: Color band denotes cathode end
- Mounting Position: Any
- Flammability Classification: Underwriters Laboratory 94V-0
- Soldering Capability: High temperature soldering guaranteed: 260 C/10 seconds at terminals
Technical Specifications
| Model | VRRM (V) | VRMS (V) | VDC (V) | I(AV) (A) | IFSM (A) | VF (V) | IR (A) | trr (ns) | RJA (C/W) | CJ (pF) | TJ,TSTG (C) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DHE1A | 50 | 35 | 50 | 1.0 | 50 | 1.0 | 5.0 | 50 | 85.0 | 20.0 | -55 to +150 | |
| DHE1B | 100 | 70 | 100 | 1.0 | 50 | 1.0 | 5.0 | 50 | 85.0 | 20.0 | -55 to +150 | |
| DHE1D | 200 | 140 | 200 | 1.0 | 50 | 1.0 | 5.0 | 50 | 85.0 | 20.0 | -55 to +150 | |
| DHE1G | 400 | 280 | 400 | 1.0 | 50 | 1.0 | 5.0 | 50 | 85.0 | 20.0 | -55 to +150 | |
| DHE1J | 600 | 420 | 600 | 1.0 | 50 | 1.0 | 5.0 | 50 | 85.0 | 20.0 | -55 to +150 | |
| DHE1K | 800 | 560 | 800 | 1.0 | 50 | 1.0 | 5.0 | 50 | 85.0 | 20.0 | -55 to +150 | |
| DHE1M | 1000 | 700 | 1000 | 1.0 | 50 | 1.0 | 5.0 | 50 | 85.0 | 20.0 | -55 to +150 | |
| Notes: 1. Reverse recovery condition: IF=0.5A, IR=1.0A, Irr=0.25A 2. Measured at 1MHz and applied reverse voltage of 4.0V D.C. 3. P.C.B. mounted with 0.2x0.2 (5.0x5.0mm) copper pad areas | ||||||||||||
Package Dimensions (SOD-123)
| Dimension | Inches | (Millimeters) |
|---|---|---|
| Length | 1.00.2 | (2.70.2) |
| Width | 1.80.2 | (3.70.2) |
| Height | 0.60.25 | (1.10.25) |
| Terminal Width | 0.10-0.30 | (N/A) |
Marking Code
| Type Number | Marking Code |
|---|---|
| DHE1A | U1A |
| DHE1B | U1B |
| DHE1D | U1D |
| DHE1G | U1G |
| DHE1J | U1J |
| DHE1K | U1K |
| DHE1M | U1M |
Soldering Profile
| Stage | Parameter | Value |
|---|---|---|
| Preheat | Temperature Min (Tsmin) | 150 C |
| Temperature Max (Tsmax) | 200 C | |
| Time (ts) | 60~120 sec | |
| Ramp-up | Average ramp-up rate (Tsmax to TL) | <3 C/sec |
| Time maintained above: Temperature (TL) | 217 C | |
| Time (tL) | 60~260 sec | |
| Peak | Peak Temperature (TP) | 255 C (0/5 sec) |
| Time within 5 C of actual Peak Temperature (tP) | 10~30 sec | |
| Ramp-down | Ramp-down Rate | <6 C/sec |
| Cooling | Time 25 C to Peak | <6 minutes |
Maximum Ratings
| Parameter | Symbol | Rating | Units | Notes |
|---|---|---|---|---|
| Maximum repetitive peak reverse voltage | VRRM | 50 - 1000 | V | (See Electrical Characteristics) |
| Maximum RMS voltage | VRMS | 35 - 700 | V | (See Electrical Characteristics) |
| Maximum DC blocking voltage | VDC | 50 - 1000 | V | (See Electrical Characteristics) |
| Maximum average forward rectified current at TL=100 C | I(AV) | 1.0 | A | |
| Peak forward surge current 8.3ms single half sine-wave superimposed on rated load | IFSM | 50 | A | |
| Maximum instantaneous forward voltage at 1.0A | VF | 1.0 | V | |
| Maximum DC reverse current TA=25 C at rated DC blocking voltage | IR | 5.0 | A | |
| Maximum DC reverse current TA=100 C at rated DC blocking voltage | IR | 50.0 | A | |
| Typical thermal resistance | RJA | 85.0 | C/W | (NOTE 3) |
| Typical junction capacitance | CJ | 20.0 | pF | (NOTE 2) |
| Maximum reverse recovery time | trr | 50 - 75 | ns | (NOTE 1) |
| Operating junction and storage temperature range | TJ,TSTG | -55 to +150 | C |
2011091105_FUXINSEMI-DHE1M_C915617.pdf
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