Electronic Amplification and Switching Solutions with Goodwork SS8050W NPN Transistor Technology
Key Attributes
Model Number:
SS8050W
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
SS8050W
Package:
SOT-323
Product Description
Product Overview
The SS8050W is an NPN transistor, complementary to the SS8550W. It is designed for various electronic applications requiring amplification and switching capabilities.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Symbol | Parameter | Test conditions | MIN | TYP | MAX | Units |
| V(BR)CBO | Collector-base breakdown voltage | IC= 100A, IE=0 | 40 | V | ||
| V(BR)CEO | Collector-emitter breakdown voltage | IC= 0.1mA, IB=0 | 25 | V | ||
| V(BR)EBO | Emitter-base breakdown voltage | IE=100A, IC=0 | 5 | V | ||
| ICBO | Collector cut-off current | VCB=40V, IE=0 | 0.1 | A | ||
| ICEO | Collector cut-off current | VCB=20V, IE=0 | 0.1 | A | ||
| IEBO | Emitter cut-off current | VEB= 5V, IC=0 | 0.1 | A | ||
| hFE(1) | DC current gain | VCE=1V, IC= 100mA | 120 | 400 | ||
| hFE(2) | DC current gain | VCE=1V, IC= 800mA | 40 | |||
| VCE(sat) | Collector-emitter saturation voltage | IC=800mA, IB= 80mA | 0.5 | V | ||
| VBE(sat) | Base-emitter saturation voltage | IC=800mA, IB= 80mA | 1.2 | V | ||
| fT | Transition frequency | VCE=10V, IC= 50mA f=30MHz | 100 | MHz | ||
| VCBO | Collector-Base Voltage | 40 | V | |||
| VCEO | Collector-Emitter Voltage | 25 | V | |||
| VEBO | Emitter-Base Voltage | 5 | V | |||
| IC | Collector Current -Continuous | 1.5 | A | |||
| PC | Collector Power Dissipation | 0.2 | W | |||
| Tj | Junction Temperature | 150 | ||||
| Tstg | Storage Temperature | -55 | 150 |
2504101957_GOODWORK-SS8050W_C46962153.pdf
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