Power semiconductor device FUXINSEMI C2M0040120D with low on resistance and power handling capabilities
Key Attributes
Model Number:
C2M0040120D
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
55A
Operating Temperature -:
-55℃~+150℃
RDS(on):
52mΩ
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
11pF
Number:
1 N-channel
Pd - Power Dissipation:
278W
Input Capacitance(Ciss):
2.44nF
Output Capacitance(Coss):
171pF
Gate Charge(Qg):
120nC
Mfr. Part #:
C2M0040120D
Package:
TO-247-3
Product Description
Product Overview
This document details the C2M0040120D, a power semiconductor device from Fuxinsemi, designed for high-performance applications. It provides comprehensive electrical characteristics, including output characteristics, on-resistance variations with temperature and current, transfer characteristics, body diode performance, threshold voltage, gate charge, and capacitance data across various operating conditions and temperatures. The device is suitable for applications requiring efficient power handling.
Product Attributes
- Brand: Fuxinsemi
- Model: C2M0040120D
- Version: Ver2.1
Technical Specifications
| Parameter | Conditions | Value |
|---|---|---|
| On Resistance, RDS(on) | IDS = 40 A, VGS = 15 V, tp < 200 s | (See Figure 4 & 6 for variations) |
| Drain-Source Current, IDS vs. Drain-Source Voltage, VDS | Tj = 150 C, tp = < 200 s | (See Figure 2) |
| Drain-Source Current, IDS vs. Drain-Source Voltage, VDS | Tj = -55 C, tp = < 200 s | (See Figure 1) |
| Drain-Source Current, IDS vs. Drain-Source Voltage, VDS | Tj = 25 C, tp = < 200 s | (See Figure 3) |
| On Resistance, RDS(on) vs. Junction Temperature, Tj | IDS = 40 A, tp < 200 s, VGS = 18 V | (See Figure 6) |
| On Resistance, RDS(on) vs. Drain Current, IDS | VGS = 15 V, tp < 200 s | (See Figure 5 for variations with temperature) |
| Gate-Source Voltage, VGS vs. Drain-Source Current, IDS | VDS = 20 V, tp < 200 s, TJ = 25 C | (See Figure 7 for variations with temperature) |
| Body Diode Characteristic | tp < 200 s | (See Figure 8 at -55C, Figure 9 at 25C, Figure 10 at 150C) |
| Threshold Voltage, Vth vs. Junction Temperature, Tj | VGS = VDS, IDS = 10 mA | (See Figure 11) |
| Gate Charge, QG | IDS = IGS = 50 mA, VDS = 40 A, TJ = 25 C | (See Figure 12 for variations with VGS) |
| Capacitances (Ciss, Coss, Crss) | TJ = 25 C, VAC = 25 mV, f = 1 MHz | (See Figure 17 & 18 for variations with VDS) |
| 3rd Quadrant Characteristic | tp < 200 s | (See Figure 13 at -55C, Figure 14 at 25C, Figure 15 at 150C) |
| Output Capacitor Stored Energy, EOSS | (See Figure 16 for variations with VDS) |
2403211444_FUXINSEMI-C2M0040120D_C22365190.pdf
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