Switching diode BAS16HT1G in SOT 23 package ideal for in high speed switching and electronic systems
Key Attributes
Model Number:
BAS16HT1G
Product Custom Attributes
Reverse Leakage Current (Ir):
1uA
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Recovery Time (trr):
4ns
Voltage - DC Reverse (Vr) (Max):
100V
Operating Junction Temperature Range:
-55℃~+150℃
Pd - Power Dissipation:
250mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
250mA
Mfr. Part #:
BAS16HT1G
Package:
SOD-323
Product Description
Product Overview
The BAS16HT1G is a high-speed switching diode designed for general-purpose applications. It is suitable for use in high-frequency switching and signal processing circuits. Its robust construction and reliable performance make it a valuable component in various electronic systems.
Product Attributes
- Brand: ON Semiconductor
- Package Type: SOT-23
- Diode Type: Switching Diode
- Configuration: Single
Technical Specifications
| Specification | Value |
|---|---|
| Part Number | BAS16HT1G |
| Maximum Repetitive Reverse Voltage (Vrrm) | 75 V |
| Maximum DC Reverse Voltage (Vr) | 75 V |
| Maximum Average Forward Rectified Current (Io) | 0.25 A |
| Maximum Forward Voltage (Vf) at IF = 10 mA | 1 V |
| Maximum Reverse Current (Ir) at VR = 75 V | 50 nA |
| Maximum Junction Capacitance (Cj) at VR = 0 V, f = 1 MHz | 4 pF |
| Operating and Storage Junction Temperature Range (Tj, Tstg) | -55C to +150C |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-3 |
| Supplier Device Package | SOT-23 |
2403211444_FUXINSEMI-BAS16HT1G_C22365181.pdf
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