FUXINSEMI BT138D-800E TRIAC 12A 800V High Shock Load Device for Industrial Inductive Load Applications
Key Attributes
Model Number:
BT138D-800E
Product Custom Attributes
Holding Current (Ih):
30mA
Current - Gate Trigger(Igt):
10mA
Voltage - On State(Vtm):
1.55V
Average Gate Power Dissipation (PG(AV)):
500mW
Current - On State(It(RMS)):
12A
Peak Off - State Voltage(Vdrm):
800V
Current - Surge(Itsm@f):
95A@50Hz
SCR Type:
-
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
1.3V
Mfr. Part #:
BT138D-800E
Package:
TO-252
Product Description
Product Overview
The BT138D Series TRIACs are 12A, 4-quadrant devices designed for high shock loading and excellent commutation performance, making them ideal for inductive loads. Applications include washing machines, vacuums, massagers, solid-state relays, and AC motor speed regulation.
Product Attributes
- Brand: FS
- Origin: www.fuxinsemi.com
- Package: TO-252AB
Technical Specifications
| Symbol | Parameter | Value | Unit | Test Condition |
| IT(RMS) | RMS on-state current | 12 | A | |
| VDRM / VRRM | Repetitive peak off-state voltage / Repetitive peak reverse voltage | 600 / 800 | V | |
| VTM | Forward "on" voltage | 1.55 | V | ITM = 15A, tp=380s |
| ITSM | Non repetitive surge peak on-state current (full cycle, F=50Hz) | 95 | A | |
| I2t | I2t value for fusing (tp=10ms) | 45 | A2s | |
| dIT/dt | Critical rate of rise of on-state current (IG =2IGT) | 50 (--) / 4 () | A/s | |
| IGM | Peak gate current | 2 | A | |
| PG(AV) | Average gate power dissipation | 0.5 | W | |
| TJ | Junction Temperature | -40 ~ +125 | ||
| TSTG | Storage Temperature | -40 ~ +150 | ||
| IGT | Gate trigger current | MAX. 10 (--) / 25 () | mA | VD =12V, IT = 0.1A, Tj =25 |
| VGT | Gate trigger voltage | MAX. 1.3 | V | |
| VGD | Gate non-trigger voltage | MIN. 0.2 | V | VD =VDRM, Tj =125 |
| IL | latching current | MAX. 30 (--) / 40 () | mA | VD =12V, IGT = 0.1A, Tj =25 |
| IH | Holding current | MAX. 30 | mA | |
| dVD/dt | Critical-rate of rise of commutation voltage | MIN. 20 | V/s | VD=2/3VDRM, Gate Open, Tj =125 |
| IDRM | Repetitive Peak Off-State Current | MAX. 10 | A | VD =VDRM, Tj=25 |
| IRRM | Repetitive Peak Reverse Current | MAX. 1 | mA | VR =VRRM, Tj=125 |
| Rth(j-c) | Junction to case (AC) | TYP. 1.4 | /W | |
| Rth(j-a) | Junction to ambient | TYP. 70 | /W |
2210311230_FUXINSEMI-BT138D-800E_C2934842.pdf
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