SCRs series featuring FUXINSEMI MCR100-8G with 0.8A sensitive gate and high shock loading capability
Key Attributes
Model Number:
MCR100-8G
Product Custom Attributes
Holding Current (Ih):
4mA
Current - Gate Trigger(Igt):
200uA
Voltage - On State(Vtm):
1.5V
Average Gate Power Dissipation (PG(AV)):
100mW
Current - On State(It(RMS)):
800mA
Peak Off - State Voltage(Vdrm):
800V
Current - Surge(Itsm@f):
8A@50Hz
SCR Type:
-
Operating Temperature:
-
Gate Trigger Voltage (Vgt):
800mV
Mfr. Part #:
MCR100-8G
Package:
TO-92
Product Description
Product Overview
The MCR100-8G is a series of 0.8A sensitive gate SCRs designed for applications requiring high shock loading capability and strong resistance to electromagnetic interference. These SCRs offer a high dv/dt rate and are suitable for various power control applications.
Product Attributes
- Brand: FS
- Origin: www.fuxinsemi.com
- Package: TO-92
Technical Specifications
| Symbol | Parameter | Value | Unit | Test Condition | |
| IT(RMS) | RMS on-state current | 0.8 | A | ||
| VDRM / VRRM | Repetitive peak off-state/reverse voltage | 600 / 800 | V | ||
| IGT | Gate trigger current | 10~200 | A | VD =12V, IT=10mA, Tj =25 | |
| VGT | Gate trigger voltage | - | 0.8 | V | |
| VGD | Gate non-trigger voltage | 0.2 | - | V | VD =1/2VDRM, Tj =110 |
| IL | Latching current | - | 3 | mA | VD =12V, IG=0.5mA, RGK=1k, Tj =25 |
| IH | Holding current | - | 4 | mA | |
| dVD/dt | Critical-rate of rise of commutation voltage | 10 | - | V/s | VD=2/3VDRM, Gate Open, Tj =110 |
| VTM | Forward "on" voltage | - | 1.5 | V | ITM =1.2A, tp=380s |
| IDRM | Repetitive Peak Off-State Current | - | 5 | A | VD =VDRM, Tj=25 |
| IRRM | Repetitive Peak Reverse Current | - | 0.1 | mA | VR =VRRM, Tj=110 |
| ITSM | Non repetitive surge peak on-state current (full cycle, F=50Hz) | 8 | A | ||
| I2t | I2t value for fusing (tp=10ms) | 0.32 | A2s | ||
| dIT/dt | Critical rate of rise of on-state current (IG =2IGT) | 50 | A/s | ||
| IGM | Peak gate current | 0.2 | A | ||
| PG(AV) | Average gate power dissipation | 0.1 | W | ||
| TJ | Junction Temperature | -40 ~ +110 | |||
| TSTG | Storage Temperature | -40 ~ +150 | |||
| Rth(j-c) | Junction to case Thermal resistance | 60 | /W | TYP. | |
| Rth(j-a) | Junction to ambient Thermal resistance | 150 | /W | TYP. |
2409300133_FUXINSEMI-MCR100-8G_C784597.pdf
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