12A 800V Triac Semiconductor Device FUXINSEMI BT138-800E Suitable for AC Power Control Applications
Key Attributes
Model Number:
BT138-800E
Product Custom Attributes
Holding Current (Ih):
30mA
Current - Gate Trigger(Igt):
10mA
Voltage - On State(Vtm):
1.55V
Average Gate Power Dissipation (PG(AV)):
500mW
Current - On State(It(RMS)):
12A
Peak Off - State Voltage(Vdrm):
800V
Current - Surge(Itsm@f):
95A@50Hz
SCR Type:
-
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
1.3V
Mfr. Part #:
BT138-800E
Package:
TO-220C
Product Description
Product Overview
The BT138 Series are 12A, 4-quadrant TRIACs from Fuxin Semiconductor, designed with high ability to withstand shock loading of large current and excellent commutation performance. These TRIACs are suitable for various AC power control applications including washing machines, vacuum cleaners, massagers, solid-state relays, and AC motor speed regulation.
Product Attributes
- Brand: Fuxin Semiconductor
- Origin: China (implied by website domain)
- Package: TO-220C
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
| Repetitive peak off-state voltage | VDRM | 600 / 800 | V | |
| Repetitive peak reverse voltage | VRRM | 600 / 800 | V | |
| RMS on-state current | IT(RMS) | 12 | A | |
| Non repetitive surge peak on-state current (full cycle, F=50Hz) | ITSM | 95 | A | |
| I2t value for fusing (tp=10ms) | I2t | 45 | A2s | |
| Critical rate of rise of on-state current (IG =2IGT) | dIT/dt | 50 (--) / 50 () | A/s | |
| Peak gate current | IGM | 2 | A | |
| Average gate power dissipation | PG(AV) | 0.5 | W | |
| Junction Temperature | TJ | -40 ~ +125 | ||
| Storage Temperature | TSTG | -40 ~ +150 | ||
| Gate trigger current | IGT | MAX. 10 (--) / 25 () | mA | VD =12V, IT = 0.1A, Tj =25 |
| Gate trigger voltage | VGT | MAX. 1.3 | V | --- |
| Gate non-trigger voltage | VGD | MIN. 0.2 | V | VD =VDRM, Tj =125 |
| Latching current | IL | MAX. 30 (--) / 40 () | mA | VD =12V, IGT = 0.1A, Tj =25 |
| Holding current | IH | MAX. 30 | mA | --- |
| Critical-rate of rise of commutation voltage | dVD/dt | MIN. 20 | V/s | VD=2/3VDRM, Gate Open, Tj =125 |
| Forward "on" voltage | VTM | MAX. 1.55 | V | ITM =15A, tp=380s |
| Repetitive Peak Off-State Current | IDRM | MAX. 10 | A | VD =VDRM, Tj=25 |
| Repetitive Peak Reverse Current | IRRM | MAX. 1 | mA | VR =VRRM, Tj=125 |
| Junction to case thermal resistance (AC) | Rth(j-c) | TYP. 1.4 | /W |
2310271811_FUXINSEMI-BT138-800E_C19100378.pdf
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