Power Switching Silicon N Channel MOSFET GL GL18N30FA9 Featuring Low Gate Charge and TO 220F Package
Key Attributes
Model Number:
GL18N30FA9
Product Custom Attributes
Drain To Source Voltage:
300V
Current - Continuous Drain(Id):
18A
Operating Temperature -:
-55℃~+150℃
RDS(on):
220mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF@25V
Input Capacitance(Ciss):
1.9nF@25V
Pd - Power Dissipation:
45W
Gate Charge(Qg):
33nC@10V
Mfr. Part #:
GL18N30FA9
Package:
TO-220F
Product Description
Product Overview
The GL18N30FA9 is a silicon N-channel Enhanced VDMOSFET developed using self-aligned planar technology. This design enhances switching performance, reduces conduction losses, and improves avalanche energy. It is suitable for various power switching circuits, contributing to system miniaturization and higher efficiency. The device comes in a RoHS-compliant TO-220F package. Key features include fast switching, low ON resistance (Rdson 0.22), low gate charge, and low reverse transfer capacitances. It has undergone 100% single pulse avalanche energy testing. Typical applications include power switch circuits for adaptors and chargers.
Product Attributes
- Brand: Wuxi Guang Lei
- Product Type: Silicon N-Channel Power MOSFET
- Technology: Self-aligned planar Technology
- Package: TO-220F
- Compliance: RoHS standard
Technical Specifications
| Symbol | Parameter | Test Conditions | Rating | Units |
|---|---|---|---|---|
| Absolute Maximum Ratings (Tc=25 unless otherwise specified) | ||||
| VDSS | Drain-to-Source Voltage | 300 | V | |
| ID | Continuous Drain Current | 18 | A | |
| ID | Continuous Drain Current | TC=100 C | 11.2 | A |
| IDMa1 | Pulsed Drain Current | 72 | A | |
| VGS | Gate-to-Source Voltage | 30 | V | |
| EAS | Single Pulse Avalanche Energy | 850 | mJ | |
| EARa1 | Avalanche Energy, Repetitive | 90 | mJ | |
| IARa1 | Avalanche Current | 4.2 | A | |
| dv/dta3 | Peak Diode Recovery dv/dt | 5.0 | V/ns | |
| PD | Power Dissipation | 45 | W | |
| Derating Factor above 25C | 0.36 | W/ | ||
| TJ, Tstg | Operating Junction and Storage Temperature Range | 55 to 150 | ||
| TL | Maximum Temperature for Soldering | 300 | ||
| Thermal Characteristics | ||||
| RJC | Thermal Resistance, Junction-to-Case | 2.78 | / W | |
| RJA | Thermal Resistance, Junction-to-Ambient | 62.5 | / W | |
| Electrical Characteristics (Tc= 25 unless otherwise specified) | ||||
| OFF Characteristics | ||||
| VDSS | Drain to Source Breakdown Voltage | VGS=0V, ID=250A | 300 | V |
| BVDSS/TJ | Bvdss Temperature Coefficient | ID=250uA,Reference25 | 0.55 | V/ |
| IDSS | Drain to Source Leakage Current | VDS=300V, VGS=0V,Ta=25 | 10 | A |
| VDS=240V, VGS=0V,Ta=125 | 100 | A | ||
| IGSS(F) | Gate to Source Forward Leakage | VGS=+30V | 100 | nA |
| IGSS(R) | Gate to Source Reverse Leakage | VGS=-30V | -100 | nA |
| ON Characteristics | ||||
| RDS(ON) | Drain-to-Source On-Resistance | VGS=10V,ID=10.0A | 0.17 - 0.22 | |
| VGS(TH) | Gate Threshold Voltage | VDS=VGS,ID=250A | 2.0 - 4.0 | V |
| gfs | Forward Transconductance | VDS=15V,ID=9A | 13 | S |
| Dynamic Characteristics | ||||
| Ciss | Input Capacitance | VGS=0V VDS=25V f=1.0MHz | 1900 | pF |
| Coss | Output Capacitance | 132 | pF | |
| Crss | Reverse Transfer Capacitance | 10 | pF | |
| Resistive Switching Characteristics | ||||
| td(ON) | Turn-on Delay Time | ID=9A,VDD=150V VGS=10V,Rg=6.1 | 26 | ns |
| tr | Rise Time | 18 | ns | |
| td(OFF) | Turn-Off Delay Time | 50 | ns | |
| tf | Fall Time | 22 | ns | |
| Qg | Total Gate Charge | ID=18A,VDD=150V VGS=10V | 33 | nC |
| Qgs | Gate to Source Charge | 8.8 | nC | |
| Qgd | Gate to Drain (Miller)Charge | 10 | nC | |
| Source-Drain Diode Characteristics | ||||
| ISD | Continuous Source Current (Body Diode) | 18 | A | |
| ISM | Maximum Pulsed Current (Body Diode) | 72 | A | |
| VSD | Diode Forward Voltage | IS=18A,VGS=0V | 1.5 | V |
| trr | Reverse Recovery Time | IS=18A,Tj=25 dIF/dt=100A/s,VGS=0V | 360 | ns |
| Qrr | Reverse Recovery Charge | 3.8 | C | |
a1: Repetitive rating; pulse width limited by maximum junction temperature.
a3: L=10mH, ID=15A, Start TJ=25
2410121536_GL-GL18N30FA9_C3025198.pdf
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