Silicon N Channel Transistor GL GL40N30A8 with TO 220AB Package and Enhanced Avalanche Energy Rating
Key Attributes
Model Number:
GL40N30A8
Product Custom Attributes
Drain To Source Voltage:
300V
Current - Continuous Drain(Id):
40A
RDS(on):
90mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
45pF
Output Capacitance(Coss):
320pF
Pd - Power Dissipation:
340W
Input Capacitance(Ciss):
3.1nF
Gate Charge(Qg):
65nC@10V
Mfr. Part #:
GL40N30A8
Package:
TO-220AB
Product Description
Product Overview
The GL40N30A8 is a silicon N-channel Enhanced VDMOSFET manufactured using a self-aligned planar technology. This design contributes to reduced conduction losses, improved switching performance, and enhanced avalanche energy. It is suitable for various power switching circuits, promoting system miniaturization and higher efficiency. The device is packaged in a RoHS-compliant TO-220AB package.
Product Attributes
- Brand: Guang Lei ()
- Origin: Wuxi, China
- Technology: Silicon N-Channel Enhanced VDMOSFET
- Package Type: TO-220AB
- Certification: RoHS Standard
Technical Specifications
| Symbol | Parameter | Test Conditions | Rating | Units | ||
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Tc=25 unless otherwise specified) | ||||||
| VDSS | Drain-to-Source Voltage | 300 | V | |||
| ID | Continuous Drain Current | 40 | A | |||
| ID | Continuous Drain Current | TC=100 C | 28 | A | ||
| IDM | Pulsed Drain Current | 160 | A | |||
| VGS | Gate-to-Source Voltage | 30 | V | |||
| EAS | Single Pulse Avalanche Energy | 1200 | mJ | |||
| EAR | Avalanche Energy, Repetitive | 100 | mJ | |||
| IAR | Avalanche Current | 6.5 | A | |||
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns | |||
| PD | Power Dissipation | 340 | W | |||
| Derating Factor above 25C | 2.72 | W/ | ||||
| TJ, Tstg | Operating Junction and Storage Temperature Range | 55 to 150 | ||||
| TL | Maximum Temperature for Soldering | 300 | ||||
| Electrical Characteristics (Tc= 25 unless otherwise specified) | ||||||
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
| VDSS | Drain to Source Breakdown Voltage | VGS=0V,ID=250A | 300 | -- | -- | V |
| BVDSS/TJ | Bvdss Temperature Coefficient | ID=250uA,Reference25 | -- | 0.2 | -- | V/ |
| IDSS | Drain to Source Leakage Current | VDS=300V, VGS=0V,Ta=25 | -- | -- | 1.0 | A |
| IDSS | Drain to Source Leakage Current | VDS=240V, VGS=0V,Ta=125 | -- | -- | 100 | A |
| IGSS(F) | Gate to Source Forward Leakage | VGS=+30V | -- | -- | 100 | nA |
| IGSS(R) | Gate to Source Reverse Leakage | VGS=-30V | -- | -- | -100 | nA |
| RDS(ON) | Drain-to-Source On-Resistance | VGS=10V,ID=20A | -- | 75 | 90 | m |
| VGS(TH) | Gate Threshold Voltage | VDS=VGS,ID=250A | 2.0 | -- | 4.0 | V |
| gfs | Forward Transconductance | VDS=15V,ID=20A | -- | 25 | -- | S |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VGS=0V, VDS=25V, f=1.0MHz | -- | 3100 | -- | pF |
| Coss | Output Capacitance | -- | 320 | -- | pF | |
| Crss | Reverse Transfer Capacitance | -- | 45 | -- | pF | |
| Resistive Switching Characteristics | ||||||
| td(ON) | Turn-on Delay Time | ID=40A,VDD=150V, VGS=10V,Rg=12 | -- | 35 | -- | ns |
| tr | Rise Time | -- | 82 | -- | ns | |
| td(OFF) | Turn-Off Delay Time | -- | 180 | -- | ns | |
| tf | Fall Time | -- | 90 | -- | ns | |
| Qg | Total Gate Charge | ID=40A,VDD=150V, VGS=10V | -- | 65 | -- | nC |
| Qgs | Gate to Source Charge | -- | 15 | -- | nC | |
| Qgd | Gate to Drain (Miller)Charge | -- | 35 | -- | nC | |
| Source-Drain Diode Characteristics | ||||||
| ISD | Continuous Source Current (Body Diode) | -- | -- | 40 | A | |
| ISM | Maximum Pulsed Current (Body Diode) | -- | -- | 160 | A | |
| VSD | Diode Forward Voltage | IS=40A,VGS=0V | -- | -- | 1.5 | V |
| trr | Reverse Recovery Time | IS=40A,Tj=25, dIF/dt=100A/s,VGS=0V | -- | 400 | -- | ns |
| Qrr | Reverse Recovery Charge | -- | 3.4 | -- | C | |
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction-to-Case | 0.37 | / W | |||
| RJA | Thermal Resistance, Junction-to-Ambient | 62 | / W | |||
Applications
- Power switch circuit of adaptors and chargers
2410121449_GL-GL40N30A8_C2880535.pdf
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