Durable power diode FUXINSEMI MUR860G suitable for inverter and electronic circuit applications

Key Attributes
Model Number: MUR860G
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
100A
Reverse Leakage Current (Ir):
10uA@600V
Reverse Recovery Time (trr):
50ns
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
600V
Diode Configuration:
Independent
Voltage - Forward(Vf@If):
1.5V@8A
Current - Rectified:
8A
Mfr. Part #:
MUR860G
Package:
TO-220AC
Product Description

Product Overview

The MUR810G thru MUR860G series are high-performance diodes designed for various applications. These devices offer efficient rectification and are suitable for use in power supplies, inverters, and other electronic circuits requiring reliable diode functionality.

Product Attributes

  • Brand: FUXIN SEMI

Technical Specifications

Model Forward Voltage (V) Reverse Current (uA) Repetitive Peak Reverse Voltage (V)
MUR810G 1.0 500 1000
MUR815G 1.0 500 1500
MUR820G 1.0 500 2000
MUR830G 1.0 500 3000
MUR840G 1.0 500 4000
MUR850G 1.0 500 5000
MUR860G 1.0 500 6000

2409302302_FUXINSEMI-MUR860G_C7503107.pdf

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