Rectifier diode FUXINSEMI MUR160 featuring glass passivated chip and 30 amp surge forward current capability
Key Attributes
Model Number:
MUR160
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
30A
Reverse Leakage Current (Ir):
5uA@600V
Reverse Recovery Time (trr):
50ns
Voltage - DC Reverse (Vr) (Max):
600V
Diode Configuration:
-
Operating Junction Temperature Range:
-55℃~+150℃@(Tj)
Voltage - Forward(Vf@If):
1.3V@1A
Current - Rectified:
1A
Mfr. Part #:
MUR160
Package:
DO-41
Product Description
Product Overview
The MUR160 is an ultra-fast recovery rectifier diode designed for high-speed rectification applications. It features a glass-passivated chip, high surge forward current capability, and a repetitive peak reverse voltage of 600V. With an average rectified output current of 1A, this diode is suitable for demanding electronic circuits requiring efficient and rapid switching.Product Attributes
- Brand: Fuxin (implied by website domain)
- Chip Technology: Glass passivated
Technical Specifications
| Item | Symbol | Unit | Conditions | MUR160 |
|---|---|---|---|---|
| Repetitive Peak Reverse Voltage | VRRM | V | 600 | |
| Average Rectified Output Current | IO | A | 60Hz Half-sine wave, Resistance load, Tc(Fig.1) | 1 |
| Surge(Non-repetitive)Forward Current | IFSM | A | 60Hz sine wave, 1 cycle, Ta=25 | 30 |
| Storage Temperature | Tstg | -55 ~ +175 | ||
| Junction Temperature | Tj | -55 ~ +150 | ||
| Peak Forward Voltage | VFM | V | IF=1A, Ta=25 | 1.30 |
| Peak Reverse Current | IRRM | A | VRM =VRRM, Ta=25 | 5 |
| Peak Reverse Current | IRRM | A | VRM =VRRM, Ta=150 | 300 |
| Reverse Recovery Time | Trr | ns | IF=0.5A, IRM=1A, IRR=0.25A | 50 |
| Thermal Resistance (Junction to Line) | RJ-L | /W | Between junction and Line | 24 |
Features
- Io: 1A
- VRRM: 600V
- Glass passivated chip
- High surge forward current capability
Applications
- Fast Rectification
Outline Dimensions
DO-41
2109070930_FUXINSEMI-MUR160_C2894303.pdf
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