SOT-23-3L package SCR FUXINSEMI MCR100-8-23L with 50A per second critical on state current rise rate
Key Attributes
Model Number:
MCR100-8-23L
Product Custom Attributes
Holding Current (Ih):
5mA
Current - Gate Trigger(Igt):
200uA
Voltage - On State(Vtm):
1.7V
Average Gate Power Dissipation (PG(AV)):
100mW
Current - On State(It(RMS)):
800mA
Peak Off - State Voltage(Vdrm):
600V
Current - Surge(Itsm@f):
8A@50Hz
SCR Type:
-
Operating Temperature:
-
Gate Trigger Voltage (Vgt):
800mV
Mfr. Part #:
MCR100-8-23L
Package:
SOT-23-3L
Product Description
Product Overview
The MCR100-8-23L is a 0.8A sensitive gate SCR in a SOT-23-3L package. It offers high shock loading capability for large currents and a high dv/dt rate with strong resistance to electromagnetic interference. This SCR is suitable for applications such as power chargers, T-tools, massagers, solid-state relays, and AC motor speed regulation.
Product Attributes
- Brand: FUXIN
- Package: SOT-23-3L
- Marking: MCR100-8-23L
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
| Repetitive peak off-state voltage | VDRM VRRM | 600 | V | |
| RMS on-state current | IT(RMS) | 0.8 | A | |
| Non repetitive surge peak on-state current (full cycle, F=50Hz) | ITSM | 8 | A | |
| I2t value for fusing (tp=10ms) | I2t | 0.35 | A2s | |
| Critical rate of rise of on-state current (IG =2IGT) | dIT/dt | 50 | A/s | |
| Peak gate current | IGM | 0.2 | A | |
| Average gate power dissipation | PG(AV) | 0.1 | W | |
| Junction Temperature | TJ | -40 ~ +110 | ||
| Storage Temperature | TSTG | -40 ~ +150 | ||
| Gate trigger current | IGT | 10~200 | A | VD =12V, IT=10mA, Tj =25 |
| Gate trigger voltage | VGT | -0.8 | V | |
| Gate non-trigger voltage | VGD | 0.2 | V | VD =1/2VDRM, Tj =110 |
| Latching current | IL | -4 | mA | VD =12V, IG=0.5mA, RGK=1k, Tj =25 |
| Holding current | IH | -5 | mA | |
| Critical-rate of rise of commutation voltage | dVD/dt | 10 | V/s | VD=2/3VDRM, Gate Open, Tj =110 |
| Forward "on" voltage | VTM | -1.7 | V | ITM =1.2A, tp=380s |
| Repetitive Peak Off-State Current | IDRM | -10 | A | VD =VDRM, Tj=25 |
| Repetitive Peak Reverse Current | IRRM | -0.1 | mA | VR =VRRM, Tj=110 |
| Thermal resistance Junction to case | Rth(j-c) | 75 | /W | TYP. |
| Thermal resistance Junction to ambient | Rth(j-a) | 150 | /W | TYP. |
2205161616_FUXINSEMI-MCR100-8-23L_C3018488.pdf
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