General purpose NPN transistor GOODWORK BC817-25 suitable for amplification and switching applications

Key Attributes
Model Number: BC817-25
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
BC817-25
Package:
SOT-23
Product Description

Product Overview

The BC817 is an NPN transistor designed for general AF applications. It features a low collector-emitter saturation voltage and has a complementary PNP type, the BC807. This transistor is suitable for various general-purpose amplification tasks.

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Not specified
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

ParameterSymbolTest ConditionsMinTypMaxUnit
Collector- base breakdown voltageVCBOIc= 100 A IE= 050V
Collector- emitter breakdown voltageVCEOIc= 10 mA IB= 045V
Emitter - base breakdown voltageVEBOIE= 100A IC= 05V
Collector-base cut-off currentICBOVCB= 45 V , IE= 00.1A
Emitter cut-off currentIEBOVEB=4V , IC=00.1A
Collector-emitter saturation voltageVCE(sat)IC=500 mA, IB=50mA0.7V
Base - emitter saturation voltageVBE(sat)IC= 500 mA, IB= 50mA1.2V
Base - emitter voltageVBEVCE=1V, IC= 500mA1.2V
DC current gainhFE(1)VCE= 1V, IC= 100mA100630
DC current gainhFE(2)VCE= 1V, IC= 500mA40
Collector output capacitanceCobVCB= 10V, f=1MHz10pF
Transition frequencyfTVCE= 5V, IC= 10mA,f=100MHz100MHz
Collector Power DissipationPCTa = 250.3W
Junction TemperatureTJ150
Storage Temperature RangeTstg-55150

hfe(1) Classification

TypeRangeMarking
BC817-16100-2506A
BC817-25160-4006B
BC817-40250-6306C

2504101957_GOODWORK-BC817-25_C37331481.pdf

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