Power Switching P Channel MOSFET GL GL4435 8 with Low Gate Charge and Ultra Low Rdson in SOP 8 Package
Key Attributes
Model Number:
GL4435-8
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
9A
Operating Temperature -:
-55℃~+155℃
RDS(on):
30mΩ@10V
Gate Threshold Voltage (Vgs(th)):
-
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
300pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
1.6nF
Pd - Power Dissipation:
3.1W
Gate Charge(Qg):
30nC@10V
Mfr. Part #:
GL4435-8
Package:
SOP-8
Product Description
Product Overview
The GL4435-8 is a P-Channel Power MOSFET from Wuxi Guang Lei electronic technology co., LTD, engineered with advanced trench technology for superior RDS(ON) and low gate charge. This RoHS-compliant SOP-8 packaged MOSFET is ideal for a wide range of power switching applications, including hard-switched and high-frequency circuits, and uninterruptible power supplies. Its high-density cell design ensures ultra-low Rdson, and it is fully characterized for avalanche voltage and current, offering excellent heat dissipation.
Product Attributes
- Brand: GL Silicon
- Manufacturer: Wuxi Guang Lei electronic technology co., LTD
- Package Type: SOP-8
- Technology: P-Channel Power MOSFET
- Compliance: RoHS standard
Technical Specifications
| Symbol | Parameter | Test Conditions | Rating | Units |
|---|---|---|---|---|
| Absolute Maximum Ratings (Tc= 25 unless otherwise specified) | ||||
| VDSS | Drain-to-Source Voltage | -30 | V | |
| ID | Continuous Drain Current | -9 | A | |
| IDM | Pulsed Drain Current | -50 | A | |
| VGS | Gate-to-Source Voltage | 20 | V | |
| PD | Power Dissipation | 3.1 | W | |
| TJ, Tstg | Operating Junction and Storage Temperature Range | 55 to 155 | ||
| Electrical Characteristics (Tc= 25 unless otherwise specified) | ||||
| OFF Characteristics | ||||
| VDSS | Drain to Source Breakdown Voltage | VGS=0V, ID=-250A | -30 | V |
| IDSS | Drain to Source Leakage Current | VDS=-30V, VGS= 0V,Ta=25 | -1.0 | A |
| IGSS(F) | Gate to Source Forward Leakage | VGS=+20V | 0.1 | A |
| IGSS(R) | Gate to Source Reverse Leakage | VGS=-20V | -0.1 | A |
| ON Characteristics | ||||
| RDS(ON) | Drain-to-Source On-Resistance | VGS=-10V,ID=-9.1A | 20 (Typ) | m |
| RDS(ON) | Drain-to-Source On-Resistance | VGS=-4.5V,ID=-6.9A | 25-40 | m |
| VGS(TH) | Gate Threshold Voltage | VDS=VGS,ID=-250A | -1.0 to -3.0 | V |
| Dynamic Characteristics | ||||
| gfs | Forward Transconductance | VDS=-15V,ID=-9.1A | 10 | S |
| Ciss | Input Capacitance | VGS=0V,VDS=-15V f=1.0MHz | 1600 | pF |
| Coss | Output Capacitance | 350 | ||
| Crss | Reverse Transfer Capacitance | 300 | ||
| Resistive Switching Characteristics | ||||
| td(ON) | Turn-on Delay Time | VDD=-15V,ID=-1A VGS=-10V,RG=6 | 10 | ns |
| tr | Rise Time | 15 | ||
| td(OFF) | Turn-Off Delay Time | 110 | ||
| tf | Fall Time | 70 | ||
| Qg | Total Gate Charge | VDD=-15V, ID=-9.1A VGS=-10V | 30 | nC |
| Qgs | Gate to Source Charge | 5.5 | ||
| Qgd | Gate to Drain (Miller)Charge | 8 | ||
| Source-Drain Diode Characteristics | ||||
| IS | Continuous Source Current (Body Diode) | -9.1 | A | |
| VSD | Diode Forward Voltage | IS=-2.1A,VGS=0V | -1.2 | V |
| RJC | Junction-to-Case | 40 | /W | |
2410121333_GL-GL4435-8_C2880533.pdf
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