SOP 8 Package N Channel MOSFET GL GL3010-8 with 100 Percent Single Pulse Avalanche Energy Testing
Key Attributes
Model Number:
GL3010-8
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
10A
RDS(on):
10mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
180pF
Output Capacitance(Coss):
300pF
Input Capacitance(Ciss):
1.6nF
Pd - Power Dissipation:
2.5W
Gate Charge(Qg):
10nC@5V
Mfr. Part #:
GL3010-8
Package:
SOP-8
Product Description
Product Overview
The GL3010-8 is a N-Channel Power MOSFET from Wuxi Guang Lei electronic technology co., LTD, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. Designed for a wide range of applications, it offers fast switching, low gate charge, low RDS(ON), low reverse transfer capacitances, and 100% single pulse avalanche energy testing. It is suitable for PWM applications, load switches, and power management, and comes in a RoHS-compliant SOP-8 package.
Product Attributes
- Brand: GL Silicon
- Manufacturer: Wuxi Guang Lei electronic technology co., LTD
- Channel Type: N-Channel
- Package Type: SOP-8
- Compliance: RoHS
Technical Specifications
| Parameter | Rating | Units | Conditions |
|---|---|---|---|
| Absolute Ratings | |||
| Drain-to-Source Voltage (VDSS) | 30 | V | (Tc=25 unless otherwise specified) |
| Continuous Drain Current (ID) | 10 | A | (Tc=25 unless otherwise specified) |
| Continuous Drain Current (ID) | 8 | A | TC = 70 C |
| Pulsed Drain Current (IDM) | 50 | A | |
| Gate-to-Source Voltage (VGS) | ±20 | V | |
| Peak Diode Recovery dv/dt (dv/dta3) | 5.0 | V/ns | |
| Power Dissipation (PD) | 2.5 | W | |
| Operating Junction and Storage Temperature Range (TJ, Tstg) | -55 to 150 | ||
| Maximum Temperature for Soldering (TL) | 300 | ||
| Electrical Characteristics | |||
| Drain to Source Breakdown Voltage (VDSS) | 30 | V | VGS=0V, ID=-250µA |
| Bvdss Temperature Coefficient (ΔBVDSS/ΔTJ) | 0.1 | V/ | ID=-250µA, Reference 25 |
| Drain to Source Leakage Current (IDSS) | 1 | µA | VDS=30,VGS=0V,Ta=25 |
| Drain to Source Leakage Current (IDSS) | 250 | µA | VDS=24V,VGS=0V,Ta=125 |
| Gate to Source Forward Leakage (IGSS(F)) | 1 | µA | VGS=+20V |
| Gate to Source Reverse Leakage (IGSS(R)) | -1 | µA | VGS=-20V |
| Drain-to-Source On-Resistance (RDS(ON)) | 7 | mΩ | VGS=10V,ID=5A |
| Drain-to-Source On-Resistance (RDS(ON)) | 11 | mΩ | VGS=4.5V,ID=5.0A |
| Gate Threshold Voltage (VGS(TH)) | 1.3 | V | VDS=VGS,ID=250µA (Typ.) |
| Gate Threshold Voltage (VGS(TH)) | 1.0 - 2.5 | V | VDS=VGS,ID=250µA (Min. - Max.) |
| Dynamic Characteristics | |||
| Forward Transconductance (gfs) | 15 | S | VDS=5V,ID=10A |
| Input Capacitance (Ciss) | 1600 | pF | VGS=0V,VDS=15V,f=1.0MHz |
| Output Capacitance (Coss) | 300 | pF | VGS=0V,VDS=15V,f=1.0MHz |
| Reverse Transfer Capacitance (Crss) | 180 | pF | VGS=0V,VDS=15V,f=1.0MHz |
| Resistive Switching Characteristics | |||
| Turn-on Delay Time (td(ON)) | 30 | ns | ID=1A,VDD=25V,VGS=10V,RG=6Ω |
| Rise Time (tr) | 20 | ns | ID=1A,VDD=25V,VGS=10V,RG=6Ω |
| Turn-Off Delay Time (td(OFF)) | 100 | ns | ID=1A,VDD=25V,VGS=10V,RG=6Ω |
| Fall Time (tf) | 80 | ns | ID=1A,VDD=25V,VGS=10V,RG=6Ω |
| Total Gate Charge (Qg) | 10 | nC | ID=5A,VDD=30V,VGS=5V |
| Gate to Source Charge (Qgs) | 5 | nC | ID=5A,VDD=30V,VGS=5V |
| Gate to Drain (Miller)Charge (Qgd) | 3 | nC | ID=5A,VDD=30V,VGS=5V |
| Source-Drain Diode Characteristics | |||
| Continuous Source Current (Body Diode) (IS) | 10 | A | |
| Maximum Pulsed Current (Body Diode) (ISM) | 50 | A | |
| Diode Forward Voltage (VSD) | 1.5 | V | IS=10A,VGS=0V |
| Reverse Recovery Time (trr) | 100 | ns | IS=10A,Tj = 25°C, dIF/dt=100A/us, VGS=0V |
| Reverse Recovery Charge (Qrr) | 240 | nC | IS=10A,Tj = 25°C, dIF/dt=100A/us, VGS=0V |
| Thermal Characteristics | |||
| Junction-to-Ambient (RθJA) | 50 | °C/W | |
2411220235_GL-GL3010-8_C2886409.pdf
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