SOP8 Package N Channel MOSFET GL GL8N04-8 with Ultra Low Rdson and High Avalanche Voltage Capability
Key Attributes
Model Number:
GL8N04-8
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
8A
RDS(on):
22mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
11pF@20V
Input Capacitance(Ciss):
415pF@20V
Pd - Power Dissipation:
2W
Gate Charge(Qg):
12nC@10V
Mfr. Part #:
GL8N04-8
Package:
SOP-8
Product Description
Product Overview
The GL8N04-8 is an N-Channel Power MOSFET from Wuxi Guang Lei electronic technology co., LTD, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. Designed for high-density cell applications, it offers ultra-low Rdson and is fully characterized for avalanche voltage and current. Its SOP-8 package ensures good heat dissipation and complies with RoHS standards. This MOSFET is suitable for power switching applications, hard switched and high-frequency circuits, and uninterruptible power supplies.
Product Attributes
- Brand: GL Silicon
- Origin: Wuxi Guang Lei electronic technology co., LTD
- Channel Type: N Channel
- Package: SOP-8
- Compliance: RoHS standard
Technical Specifications
| Symbol | Parameter | Test Conditions | Rating | Units |
|---|---|---|---|---|
| Absolute Maximum Ratings (Tc= 25 unless otherwise specified) | ||||
| VDSS | Drain-to-Source Voltage | 40 | V | |
| ID | Continuous Drain Current | 8 | A | |
| IDM | Pulsed Drain Current | 40 | A | |
| VGS | Gate-to-Source Voltage | 20 | V | |
| PD | Power Dissipation | 2 | W | |
| TJ, Tstg | Operating Junction and Storage Temperature Range | 55 to 150 | ||
| Electrical Characteristics (Tc= 25 unless otherwise specified) | ||||
| OFF Characteristics | ||||
| V(BR)DSS | Drain to Source Breakdown Voltage | VGS=0V, ID=250A | 40 | V |
| IDSS | Drain to Source Leakage Current | VDS=40V,VGS=0V,Ta=25 | -- | 1.0 A |
| IGSS(F) | Gate to Source Forward Leakage | VGS=+10V | -- | 0.1 A |
| IGSS(R) | Gate to Source Reverse Leakage | VGS=-10V | -- | -0.1 A |
| ON Characteristics | ||||
| RDS(ON) | Drain-to-Source On-Resistance | VGS=10V,ID=8A | -- 17 22 | m |
| VGS(TH) | Gate Threshold Voltage | VDS=VGS,ID=250A | 1.0 1.5 2.5 | V |
| Dynamic Characteristics | ||||
| gfs | Forward Transconductance | VDS=15V,ID=8A | 3 -- -- | S |
| Ciss | Input Capacitance | VGS=0V,VDS=20V, f=1.0MHz | -- 415 -- | pF |
| Coss | Output Capacitance | -- 115 -- | pF | |
| Crss | Reverse Transfer Capacitance | -- 11 -- | pF | |
| Resistive Switching Characteristics | ||||
| td(ON) | Turn-on Delay Time | VDD=15V,RL=2.5, VGS=10V,RG=3 | -- 4.5 -- | ns |
| tr | Rise Time | -- 3.0 -- | ns | |
| td(OFF) | Turn-Off Delay Time | -- 14.5 -- | ns | |
| tf | Fall Time | -- 3.0 -- | ns | |
| Qg | Total Gate Charge | VDD=20V,ID=8A, VGS=10V | -- 12 -- | nC |
| Qgs | Gate to Source Charge | -- 3.2 -- | nC | |
| Qgd | Gate to Drain (Miller)Charge | -- 3.1 -- | nC | |
| Source-Drain Diode Characteristics | ||||
| IS | Continuous Source Current (Body Diode) | -- -- 8 | A | |
| VSD | Diode Forward Voltage | IS=8A,VGS=0V | -- -- 1.5 | V |
| Thermal Characteristics | ||||
| RJA | Junction-to-Ambient | 62.5 | /W | |
2410121342_GL-GL8N04-8_C2886404.pdf
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