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quality High Reliability P Channel MOSFET GL GL8P04 Featuring Low Gate Charge and RoHS Compliance factory
quality High Reliability P Channel MOSFET GL GL8P04 Featuring Low Gate Charge and RoHS Compliance factory

High Reliability P Channel MOSFET GL GL8P04 Featuring Low Gate Charge and RoHS Compliance

Key Attributes
Model Number: GL8P04
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
8A
RDS(on):
33mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Input Capacitance(Ciss):
750pF@0V
Pd - Power Dissipation:
2W
Gate Charge(Qg):
15nC@10V
Mfr. Part #:
GL8P04
Package:
SOT-23
Product Description

Product Overview

The GL8P04 is a P-Channel Power MOSFET from Wuxi Guang Lei electronic technology co., LTD, utilizing advanced trench technology and design. It offers excellent RDS(ON) with low gate charge, making it suitable for a wide range of applications including power switching, hard switched and high frequency circuits, and uninterruptible power supplies. The device is housed in a RoHS-compliant SOT-23-3L package, ensuring good heat dissipation.

Product Attributes

  • Brand: GL Silicon
  • Manufacturer: Wuxi Guang Lei electronic technology co., LTD
  • Package Type: SOT-23-3L
  • Compliance: RoHS standard
  • Technology: Advanced trench technology

Technical Specifications

Symbol Parameter Test Conditions Rating Units Min. Typ. Max.
Absolute Ratings (Tc= 25 unless otherwise specified)
VDSS Drain-to-Source Voltage -40 V
ID Continuous Drain Current -8 A
IDM Pulsed Drain Current -5.6 A
VGS Gate-to-Source Voltage 20 V
PD Power Dissipation 2.0 W
TJ, Tstg Operating Junction and Storage Temperature Range 150, 55 to 150
Electrical Characteristics (Tc= 25 unless otherwise specified)
OFF Characteristics
VDSS Drain to Source Breakdown Voltage VGS=0V, ID=250A -40 V
IDSS Drain to Source Leakage Current VDS=-40V, VGS= 0V,Ta=25 A -1.0
IGSS(F) Gate to Source Forward Leakage VGS=+20V A 0.1
IGSS(R) Gate to Source Reverse Leakage VGS=-20V A -0.1
ON Characteristics
RDS(ON) Drain-to-Source On-Resistance VGS=-10V,ID=-5A m 23 33
VGS(TH) Gate Threshold Voltage VDS=VGS,ID=250A -1.0 V -3.0
Dynamic Characteristics
gfs Forward Transconductance VDS=-15V,ID=-5A 20 S
Ciss Input Capacitance VGS=0V,VDS=-20V f=1.0MHz pF 750
Coss Output Capacitance pF 100
Crss Reverse Transfer Capacitance pF 75
Resistive Switching Characteristics
td(ON) Turn-on Delay Time VDD=-20V,RL=2 VGS=-10V,RG=3 ns 10
tr Rise Time ns 9
td(OFF) Turn-Off Delay Time ns 28
tf Fall Time ns 11
Qg Total Gate Charge VDD=-20V, ID=-8A VGS=-10V nC 15
Qgs Gate to Source Charge nC 4.2
Qgd Gate to Drain (Miller )Charge nC 4.0
Source-Drain Diode Characteristics
IS Continuous Source Current (Body Diode) -8 A
VSD Diode Forward Voltage IS=-8A,VGS=0V V -1.2
RJC Junction-to-Case 83.3 /W

Notes:

  • a1: Repetitive Rating: Pulse width limited by maximum junction temperature.
  • a2: Surface Mounted on FR4 Board, t10sec.
  • a3: Pulse Test: Pulse Width300s, Duty Cycle2%.
  • a4: Guaranteed by design, not subject to production Test circuit.

2410121333_GL-GL8P04_C2924226.pdf

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