Collector Current 3A NPN Transistor GOODWORK D882M Plastic Encapsulate Suitable for Various Circuits

Key Attributes
Model Number: D882M
Product Custom Attributes
Current - Collector Cutoff:
1uA
Emitter-Base Voltage(Vebo):
6V
Pd - Power Dissipation:
1.25W
Transition Frequency(fT):
90MHz
Type:
NPN
Current - Collector(Ic):
3A
Collector - Emitter Voltage VCEO:
30V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
D882M
Package:
TO-252
Product Description

Product Overview

The D882M is a NPN Plastic-Encapsulate Transistor designed for general-purpose applications. It offers a continuous collector current of up to 3A and a power dissipation of 1.25W, making it suitable for various electronic circuits.

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Plastic-Encapsulate
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 30 V
Emitter-Base Voltage VEBO 6 V
Collector Current - Continuous IC 3 A
Collector Power Dissipation PC 1.25 W
Operation Junction and Storage Temperature Range TJ,Tstg -55 150
Collector-base breakdown voltage V(BR)CBO IC = 100A, IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO IC = 10mA, IB=0 30 V
Emitter-base breakdown voltage V(BR)EBO IE= 100A, IC=0 6 V
Collector cut-off current ICBO VCB= 40 V, IE=0 1 A
Collector cut-off current ICEO VCE= 30 V, IB=0 10 A
Emitter cut-off current IEBO VEB= 6 V, IC=0 1 A
DC current gain hFE VCE= 2 V, IC= 1A 60 400
Collector-emitter saturation voltage VCE (sat) IC= 2A, IB= 0.2 A 0.5 V
Base-emitter saturation voltage VBE (sat) IC= 2A, IB= 0.2 A 1.5 V
Transition frequency fT VCE= 5V, IC=0.1A f =10MHz 90 MHz

2504101957_GOODWORK-D882M_C47089149.pdf

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