NPN Transistor GOODWORK BC817-40W SOT-323 Package Ideal for Amplification and Switching Applications
Key Attributes
Model Number:
BC817-40W
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
5V
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
45V
Mfr. Part #:
BC817-40W
Package:
SOT-323
Product Description
Product Overview
The BC817-40W is an NPN transistor designed for general AF applications. It offers high collector current, high current gain, and a low collector-emitter saturation voltage. Its complementary type is the BC807 (PNP).
Product Attributes
- Type: Transistor (NPN)
- Package: SOT-323
- Brand: (Not specified)
- Origin: (Not specified)
- Material: (Not specified)
- Color: (Not specified)
- Certifications: (Not specified)
Technical Specifications
| Parameter | Symbol | Test conditions | MIN | MAX | UNIT |
| Collector-Base Voltage | VCBO | IC= 10A, IE=0 | 50 | V | |
| Collector-Emitter Voltage | VCEO | IC= 10mA, IB=0 | 45 | V | |
| Emitter-Base Voltage | VEBO | IE= 1A, IC=0 | 5 | V | |
| Collector Current -Continuous | IC | 0.5 | A | ||
| Collector Power Dissipation | PC | TA=25 | 0.3 | W | |
| Junction Temperature | Tj | 150 | |||
| Storage Temperature | Tstg | -55 | 150 | ||
| Collector Cut-off Current | ICBO | VCB= 45 V, IE=0 | 0.1 | A | |
| Emitter Cut-off Current | IEBO | VEB=4V, IC=0 | 0.1 | A | |
| DC Current Gain | hFE(1) | VCE=1V, IC=100mA | 100 | 600 | |
| hFE(2) | VCE=1V, IC=500mA | 40 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC= 500mA, IB= 50mA | 0.7 | V | |
| Base-Emitter Saturation Voltage | VBE(sat) | IC= 500mA, IB= 50mA | 1.2 | V | |
| Base-Emitter Voltage | VBE | VCE= 1 V, IC= 500mA | 1.2 | V | |
| Collector Capacitance | Cob | VCB=10V, f=1MHz | 10 | pF | |
| Transition Frequency | fT | VCE= 5 V, IC= 10mA f=100MHz | 100 | MHz |
2410161003_GOODWORK-BC817-40W_C41431975.pdf
Related Products
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
Silicon Bidirectional Trigger Diode YFW LLDB3 for Thyristor Phase Control Circuits Lamp Dimming and Speed Control
Product OverviewThe LL-34 LLDB3/LLDB4 are Silicon Bidirectional Trigger Diodes designed for thyristor phase control circuits. They are suitable for applications such as lamp-dimming, universal-motor speed controls, and heat controls.Product AttributesBrand: GuangDongYoufengMicroelectronicsCo,Ltd...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
