PNP transistor GOODWORK SS8550 optimized for general purpose in electronic amplification and switching

Key Attributes
Model Number: SS8550
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
100MHz
Type:
PNP
Number:
-
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
SS8550
Package:
SOT-23
Product Description

SS8550 PNP Transistor

The SS8550 is a PNP transistor designed for general-purpose applications. It is complementary to the SS8050 and offers high collector current capabilities. This transistor is suitable for various electronic circuits requiring amplification or switching functions.

Product Attributes

  • Marking Type: SS8550
  • Marking Code: Y2

Technical Specifications

ParameterSymbolTest ConditionsMinMaxUnit
CollectorBase VoltageVCBO-40V
CollectorEmitter VoltageVCEO-25V
EmitterBase VoltageVEBO-5V
Collector Current ContinuousIC-1.5A
Collector DissipationPCTa=25200mW
Collector-base breakdown voltageV(BR)CBOIC =-100uA, IE = 0-40V
Collector-emitter breakdown voltageV(BR)CEOIC =-0.1 mA, IB = 0-25V
Emitter-base breakdown voltageV(BR)EBOIE =-100uA, IC = 0-5V
Collector cut-off currentICBOVCB =-40V, IE = 0-0.1uA
Collector cut-off currentICBOVEB =-5V, IC = 0-0.1uA
DC current gainhFE1VC =-10V, IC =-50mA, IB = 0120
DC current gainhFE2IC =-800mA, IB =-80mA40100
Transition frequencyfTVC =-10V, IC =-50mA30MHz
Collector-emitter saturation voltageVCE(sat)IC =-800mA, IB =-80mA-1.2V
Base-emitter saturation voltageVBE(sat)IC =-800mA, IB =-80mA-1.5V
Emitter cut-off currentIEBOVC =-20V, IB =0-0.1uA
Collector output capacitanceCobVC =-10V, IE =0, f=1MHz10pF

hFE Classification

RANKRANGE
L300-400
H200-350
J120-200

2410010232_GOODWORK-SS8550_C909745.pdf

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