NPN Transistor GOODWORK BCP56 Offering 100V Collector Base Voltage and 80V Collector Emitter Voltage
Key Attributes
Model Number:
BCP56
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
1.5W
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
80V
Operating Temperature:
-65℃~+150℃@(Tj)
Mfr. Part #:
BCP56
Package:
SOT-223
Product Description
BCP54/BCP55/BCP56 NPN Transistors
For AF driver and output stages, these NPN transistors offer high collector current, low collector-emitter saturation voltage, and are complementary to BCP51, BCP52, BCP53.
Technical Specifications
| Parameter | Symbol | BCP54 | BCP55 | BCP56 | Unit |
| Collector - Base Voltage | VCBO | 45 | 60 | 100 | V |
| Collector - Emitter Voltage | VCEO | 45 | 60 | 80 | V |
| Emitter - Base Voltage | VEBO | 5 | 5 | 5 | V |
| Collector Current - Continuous | IC | 1 | 1 | 1 | A |
| Collector Power Dissipation | PC | 1.5 | 1.5 | 1.5 | W |
| Thermal Resistance Junction to Ambient | RJA | 83.3 | 83.3 | 83.3 | /W |
| Junction Temperature | TJ | 150 | 150 | 150 | |
| Storage Temperature Range | Tstg | -65 to 150 | -65 to 150 | -65 to 150 | |
| Collector-base breakdown voltage | VCBO | 45 | 60 | 100 | V |
| Collector- emitter breakdown voltage | VCEO | 45 | 60 | 80 | V |
| Emitter - base breakdown voltage | VEBO | 5 | 5 | 5 | V |
| Collector-base cut-off current | ICBO | 0.1 | 0.1 | 0.1 | uA |
| Emitter cut-off current | IEBO | 0.1 | 0.1 | 0.1 | uA |
| Collector-emitter saturation voltage | VCE(sat) | 0.5 | 0.5 | 0.5 | V |
| Base-emitter saturation voltage | VBE(sat) | 1.2 | 1.2 | 1.2 | V |
| Base-emitter voltage | VBE | 1 | 1 | 1 | V |
| DC current gain | hFE(1) | 25 | 25 | 25 | |
| DC current gain | hFE(2) | 63 | 63 | 63 | |
| DC current gain | hFE(3) | 250 | 250 | 250 | |
| Transition frequency | fT | 100 | 100 | 100 | MHz |
2412061650_GOODWORK-BCP56_C41399468.pdf
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