Dual transistor NPN plus PNP epitaxial planar die GOODWORK MMDT2227 for power amplification and switching
Key Attributes
Model Number:
MMDT2227
Product Custom Attributes
Current - Collector Cutoff:
10nA
Emitter-Base Voltage(Vebo):
6V
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
300MHz
Type:
PNP
Number:
1 NPN + 1 PNP
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
MMDT2227
Package:
SOT-363
Product Description
Product Overview
The MMDT2227 is a DUAL TRANSISTOR (NPN+PNP) featuring epitaxial planar die construction. It integrates one 2222A NPN transistor and one 2907A PNP transistor, making it ideal for power amplification and switching applications.
Product Attributes
- Marking: K27
Technical Specifications
| Model | Parameter | Symbol | Test Conditions | Min | Max | Unit |
| NPN 2222A | Collector-Base Voltage | VCBO | 75 | V | ||
| Collector-Emitter Voltage | VCEO | 40 | V | |||
| Emitter-Base Voltage | VEBO | 6 | V | |||
| Collector Current -Continuous | IC | 600 | mA | |||
| Collector Power Dissipation | PC | Ta=25 | 200 | mW | ||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | Tstg | -55 | 150 | |||
| Collector-base breakdown voltage | V(BR)CBO | IC= 10A, IE=0 | 75 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC= 10mA, IB=0 | 40 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=10A.IC=0 | 6 | V | ||
| Collector cut-off current | ICBO | VCB= 60V, IE=0 | 10 | nA | ||
| Collector cut-off current | ICEX | VCE= 60V,VEB(off)=3V | 10 | nA | ||
| Emitter cut-off current | IEBO | VEB= 3 V, IC=0 | 10 | nA | ||
| DC current gain | hFE | VCE=10V, IC= 0.1mA | 35 | |||
| DC current gain | hFE | VCE=10V, IC= 1mA | 50 | |||
| DC current gain | hFE | VCE=10V, IC= 10mA | 75 | |||
| DC current gain | hFE | VCE=10V, IC= 150mA | 100 | 300 | ||
| PNP 2907A | Collector-Base Voltage | VCBO | -60 | V | ||
| Collector-Emitter Voltage | VCEO | -60 | V | |||
| Emitter-Base Voltage | VEBO | -5 | V | |||
| Collector Current -Continuous | IC | -600 | mA | |||
| Collector Power Dissipation | PC | Ta=25 | 200 | mW | ||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | Tstg | -55 | 150 | |||
| Collector-base breakdown voltage | V(BR)CBO | IC= -10A, IE=0 | -60 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC= -10mA, IB=0 | -60 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=-10A, IC=0 | -5 | V | ||
| Collector cut-off current | ICBO | VCB=-50V, IE=0 | -10 | nA |
2508261540_GOODWORK-MMDT2227_C50581513.pdf
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