NPN Transistor GOODWORK MJE182 Designed for Low Current High Speed Switching and Amplification

Key Attributes
Model Number: MJE182
Product Custom Attributes
Emitter-Base Voltage(Vebo):
7V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
12.5W
Transition Frequency(fT):
50MHz
Type:
NPN
Current - Collector(Ic):
3A
Collector - Emitter Voltage VCEO:
80V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
MJE182
Package:
TO-126
Product Description

MJE182 NPN TO-126 Plastic-Encapsulate Transistors

The MJE182 is an NPN transistor designed for low power audio amplification and low current high-speed switching applications. It offers high current output up to 3A, low saturation voltage, and is a complement to the MJE172 transistor.

Product Attributes

  • Package: TO-126 Plastic-Encapsulate

Technical Specifications

ParameterSymbolConditionsMinTypMaxUnit
Breakdown VoltageBVCBOIC = 100A, IE = 0100V
BVCEOIC = 1mA, IB = 080V
BVEBOIE = 100A, IC = 07V
ICBOVCB = 100V, IB = 00.1A
IEBOVEB = 7V, IC = 00.1A
DC Current GainhFEVCE=1V, IC= 100mA50250
VCE=1V, IC= 500mA30
VCE=1V, IC= 1.5A12
Collector-Emitter Saturation VoltageVCE(sat)IC = 500mA, IB = 50mA0.3V
IC = 1.5A, IB = 150mA0.9V
IC = 3A, IB = 600mA1.7V
Base-Emitter Saturation VoltageVBE(sat)IC = 1.5A, IB = 150mA1.5V
IC = 3A, IB = 600mA2.0V
Base-Emitter On VoltageVBE(on)VCE=1V, IC= 500mA1.2V
Transition FrequencyfTVCE = 10V, IB = 100mA50MHz
Output CapacitanceCobVCB = 10V,IE = 0,f=1MHz30pF

Absolute Maximum Ratings

ParameterSymbolValueUnit
Collector-Base VoltageBVCBO100V
Collector-Emitter VoltageBVCEO80V
Emitter-Base VoltageBVEBO7V
Collector Current (DC)IC3A
Collector Current (Pulse)ICP6A
Power Dissipation (TA=25)PC1.5W
Power Dissipation (TC=25)12.5W
Junction TemperatureTj150
Storage TemperatureTstg-55150

2410121607_GOODWORK-MJE182_C22470869.pdf

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