NPN transistor GOODWORK MMBTA42 designed to support peak collector current in electronic applications

Key Attributes
Model Number: MMBTA42
Product Custom Attributes
Current - Collector Cutoff:
250nA
Pd - Power Dissipation:
350mW
Transition Frequency(fT):
50MHz
Type:
NPN
Current - Collector(Ic):
300mA
Collector - Emitter Voltage VCEO:
300V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
MMBTA42
Package:
SOT-23
Product Description

MMBTA42 NPN Transistor

The MMBTA42 is an NPN transistor designed for high breakdown voltage and low collector-emitter saturation voltage. It serves as a complementary part to the MMBTA92. This transistor is suitable for various electronic applications requiring reliable switching and amplification.

Product Attributes

  • Marking Type: MMBTA42
  • Marking Code: 1D

Technical Specifications

Symbol Parameter Test conditions Min Max Unit
VCBO CollectorBase Voltage 300 V
VCEO CollectorEmitter Voltage 300 V
VEBO EmitterBase Voltage 5 V
IC Collector Current - Continuous 0.5 A
ICM Collector Current - Peak 0.3 A
PC Collector Power Dissipation (Ta=25) 0.35 W
RthJA Thermal Resistance, junction to Ambient 357 /W
Tstg Storage Temperature -55 +150
TJ Junction Temperature 150
V(BR)CBO Collector-base breakdown voltage IC = 100uA, IE = 0 300 V
VCEO (BR) Collector-emitter breakdown voltage IC = 1mA, IB = 0 300 V
VEBO (BR) Emitter-base breakdown voltage IE = 100uA, IC = 0 5 V
ICBO Collector cut-off current VCB = 200V, IE = 0 0.1 uA
IEBO Emitter cut-off current VEB = 5V, IC = 0 0.2 uA
hFE(1) DC current gain VCE = 10V, IC = 1mA 60
hFE(2) DC current gain VCE = 20V, IC = 10mA 100
hFE(3) DC current gain VCE = 10V, IC = 30mA 60 200
VCE(sat) Collector-emitter saturation voltage IC = 20mA, IB = 2mA 0.25 V
VBE(sat) Base-emitter saturation voltage IC = 20mA, IB = 2mA 0.9 V
fT Transition frequency VCE = 10V, IC = 10mA, f=30MHz 50 MHz

2410010232_GOODWORK-MMBTA42_C909760.pdf

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