PNP Plastic Encapsulated Transistor GOODWORK PBSS5350X-GK for Power Management and Switching Circuits
Key Attributes
Model Number:
PBSS5350X-GK
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
5V
Pd - Power Dissipation:
550mW
Transition Frequency(fT):
100MHz
Type:
PNP
Current - Collector(Ic):
3A
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
PBSS5350X-GK
Package:
SOT-89
Product Description
Product Overview
The PBSS5350X is a PNP Plastic-Encapsulated Transistor designed for various applications including supply line switching, battery chargers, DC/DC converters, and LCD backlighting. It offers a low collector-to-emitter saturation voltage, high current capability, and higher efficiency, leading to reduced heat generation and smaller printed-circuit board requirements. This device complements the PBSS4350X and is marked as S46.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Plastic-Encapsulated
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Collector-base breakdown voltage | BVCBO | IC = -100A, IE = 0 | -50 | V | ||
| Collector-emitter breakdown voltage | BVCEO | IC = -1mA, IB = 0 | -50 | V | ||
| Emitter-base breakdown voltage | BVEBO | IE = -100A, IC = 0 | -5 | V | ||
| Collector cut-off current | ICBO | VCB = -50V, IE = 0 | -100 | nA | ||
| Emitter cut-off current | IEBO | VEB =-5V, IC = 0 | -100 | nA | ||
| DC current gain | hFE | VCE= -2V, IB= -0.1A | 200 | |||
| VCE= -2V, IB= -0.5A | 200 | |||||
| VCE= -2V, IB= -1A | 200 | 450 | ||||
| VCE= -2V, IB= -2A | 130 | |||||
| VCE= -2V, IB= -3A | 80 | |||||
| Collector-emitter saturation voltage* | VCE(sat) | IC = -500mA, IB = -50mA | -90 | mV | ||
| IC = -1A, IB = -50mA | -180 | |||||
| IC = -2A, IB = -100mA | -320 | |||||
| IC = -2A, IB = -200mA | -270 | |||||
| IC = -3A, IB = -300mA | -390 | |||||
| Equivalent on-resistance | RCE(sat) | IC = -2A, IB = -200mA | 135 | m | ||
| Base -emitter saturation voltage* | VBE(sat) | IC = -2A, IB = -100mA | -1.1 | V | ||
| IC = -3A, IB = -300mA | -1.2 | |||||
| Base-emitter turn on voltage | VBE(on) | VCE= -2V, IB= -1A | -1.1 | V | ||
| Transition frequency | fT | VCE = -10V, IE = -100mA f=100MHz | 100 | MHz | ||
| Collector Output Capacitance | Cob | VCB = -10V,IE = 0,f=1MHz | 35 | pF | ||
| Thermal resistance from junction to ambient | Rth(j-a) | in free air; Note1 | 225 | / W | ||
| Note2 | 125 | |||||
| Note3 | 90 | |||||
| Note4 | 80 | |||||
| Thermal resistance from junction to soldering point | Rth(j-s) | 16 | / W |
2509161435_GOODWORK-PBSS5350X-GK_C51912411.pdf
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