Synchronous buck converter MOSFET GOODWORK AO4485 with excellent RDS ON and gate charge performance
Key Attributes
Model Number:
AO4485
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
13A
RDS(on):
14mΩ@10V;19.5mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
172pF
Number:
1 P-Channel
Output Capacitance(Coss):
190pF
Pd - Power Dissipation:
3W
Input Capacitance(Ciss):
2.525nF
Gate Charge(Qg):
35nC@10V
Mfr. Part #:
AO4485
Package:
SOP-8
Product Description
Product Overview
The AO4485 is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed with full function reliability approved.
Product Attributes
- Brand: N/A (Implied by part number AO4485)
- Certifications: RoHS, Green Product
- Origin: N/A
- Material: N/A
- Color: N/A
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -40 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TA=25°C | -13 | A | ||
| Continuous Drain Current | ID | TA=100°C | -8.5 | A | ||
| Pulsed Drain Current | IDM | -52 | A | |||
| Single Pulse Avalanche Energy | EAS | 80 | mJ | |||
| Total Power Dissipation | PD | TA=25°C | 3 | W | ||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = -250µA | -40 | - | - | V |
| Gate-body Leakage current | IGSS | VDS = 0V, VGS = ±20V | ±100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = -40V, VGS = 0V, TJ=25°C | -1 | µA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = -40V, VGS = 0V, TJ=100°C | -100 | µA | ||
| Gate-Threshold Voltage | VGS(th) | VDS = VGS, ID = -250µA | -1.0 | -1.5 | -2.2 | V |
| Drain-Source On-Resistance | RDS(on) | VGS = -10V, ID = -10A | 14.0 | 19 | mΩ | |
| Drain-Source On-Resistance | RDS(on) | VGS = -4.5V, ID = -5 A | 19.5 | 25 | mΩ | |
| Forward Transconductance | gfs | VDS = -10V, ID = -10A | 44 | - | S | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS = -20V, VGS =0V, f =1MHz | 2525 | - | pF | |
| Output Capacitance | Coss | VDS = -20V, VGS =0V, f =1MHz | 190 | - | pF | |
| Reverse Transfer Capacitance | Crss | VDS = -20V, VGS =0V, f =1MHz | 172 | - | pF | |
| Gate Resistance | Rg | f =1MHz | 10 | - | Ω | |
| Switching Characteristics | ||||||
| Total Gate Charge | Qg | VGS = -10V,VDS = -20V, ID= -10A | 35 | - | nC | |
| Gate-Source Charge | Qgs | VGS = -10V,VDS = -20V, ID= -10A | 5.5 | - | ||
| Gate-Drain Charge | Qgd | VGS = -10V,VDS = -20V, ID= -10A | 8 | - | ||
| Turn-On Delay Time | td(on) | VGS = -10V, VDD = -20V, RG = 3Ω, ID= -10A | 14.5 | - | ns | |
| Rise Time | tr | VGS = -10V, VDD = -20V, RG = 3Ω, ID= -10A | 20.2 | - | ns | |
| Turn-Off Delay Time | td(off) | VGS = -10V, VDD = -20V, RG = 3Ω, ID= -10A | 32 | - | ns | |
| Fall Time | tf | VGS = -10V, VDD = -20V, RG = 3Ω, ID= -10A | 10 | - | ns | |
| Drain-Source Body Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | IS = -10A, VGS = 0V | - | -1.2 | V | |
| Continuous Source Current | IS | TC=25°C | -13 | A | ||
2504251720_GOODWORK-AO4485_C48580949.pdf
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