GOODWORK AOD403 GK P Channel MOSFET with Trenched Structure and Enhanced Electrical Characteristics
Key Attributes
Model Number:
AOD403-GK
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
70A
Operating Temperature -:
-55℃~+150℃
RDS(on):
5.4mΩ
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
487pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
4.32nF@15V
Pd - Power Dissipation:
31.2W
Gate Charge(Qg):
45nC@10V
Mfr. Part #:
AOD403-GK
Package:
TO-252
Product Description
Product Overview
The AOD403 is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed with full function reliability approval.
Product Attributes
- Brand: AOD
- Certifications: RoHS, Green Product
- Type: P-Ch 30V Fast Switching MOSFET
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current @ TC=25°C | ID | VGS = -10V | -70 | A | ||
| Continuous Drain Current @ TC=75°C | ID | VGS = -10V | -42 | A | ||
| Pulsed Drain Current | IDM | -175 | A | |||
| Single Pulse Avalanche Energy | EAS | 31 | mJ | |||
| Avalanche Current | IAS | -25 | A | |||
| Total Power Dissipation @ TC=25°C | PD | 31.2 | W | |||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | +150 | °C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = -250µA | -30 | V | ||
| Gate-body Leakage current | IGSS | VDS = 0V, VGS = ±20V | ±100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = -24V, VGS = 0V, TJ=25°C | -1 | µA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = -24V, VGS = 0V, TJ=55°C | -5 | µA | ||
| Gate-Threshold Voltage | VGS(th) | VDS = VGS, ID = -250µA | -1.0 | -1.6 | -2.5 | V |
| Drain-Source On-Resistance | RDS(on) | VGS = -10V, ID = -12A | 5.4 | 7 | mΩ | |
| Drain-Source On-Resistance | RDS(on) | VGS = -4.5V, ID = -8A | 7 | 10 | mΩ | |
| Forward Transconductance | gfs | VDS = -5V, ID = -20A | 28 | S | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS = -15V, VGS =0V, f =1MHz | 4320 | pF | ||
| Output Capacitance | Coss | VDS = -15V, VGS =0V, f =1MHz | 529 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS = -15V, VGS =0V, f =1MHz | 487 | pF | ||
| Switching Characteristics | ||||||
| Gate Resistance | Rg | VDS = 0V, VGS= 0V, f=1.0MHz | 4.0 | Ω | ||
| Total Gate Charge | Qg | VGS = -10V, VDS = -15V, ID= -15A | 45 | nC | ||
| Gate-Source Charge | Qgs | VGS = -10V, VDS = -15V, ID= -15A | 8.5 | |||
| Gate-Drain Charge | Qgd | VGS = -10V, VDS = -15V, ID= -15A | 12.8 | |||
| Turn-On Delay Time | td(on) | VGS = -10V, VDD = -15V, RG = 2.5Ω, ID= -15A | 18.9 | nS | ||
| Rise Time | tr | VGS = -10V, VDD = -15V, RG = 2.5Ω, ID= -15A | 15.7 | |||
| Turn-Off Delay Time | td(off) | VGS = -10V, VDD = -15V, RG = 2.5Ω, ID= -15A | 64.8 | |||
| Fall Time | tf | VGS = -10V, VDD = -15V, RG = 2.5Ω, ID= -15A | 36.5 | |||
| Drain-Source Body Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | IS = -1A, VGS = 0V | -1 | V | ||
| Continuous Source Current | IS | VG=VD=0V , Force Current | -80 | A | ||
2504101957_GOODWORK-AOD403-GK_C42456339.pdf
Related Products
High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics
Product OverviewThe RS3A-RS3M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding electronic circuits. These diodes are ...
digital transistor YANGJIE DTA114YE featuring built in resistors designed for automatic insertion and halogen free
Digital Transistors (Built-in Resistors)The DTA114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It offers moisture sensitivity level 1 and is halogen-free, making it a reliable choice for various electronic ...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages
Product OverviewThe DTC144EUAQ is an NPN Digital Transistor with built-in resistors, designed to simplify circuit design by eliminating the need for external input resistors. It is ideal for configuring inverter circuits and offers easy setup for on/off conditions, reducing component count and board ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
