Synchronous buck converter MOSFET GOODWORK 70P03 with high cell density trenched P channel structure
Key Attributes
Model Number:
70P03
Product Custom Attributes
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
70A
Operating Temperature -:
-40℃~+150℃
RDS(on):
10mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
487pF
Number:
1 P-Channel
Output Capacitance(Coss):
529pF
Input Capacitance(Ciss):
4.32nF
Pd - Power Dissipation:
-
Gate Charge(Qg):
45nC@10V
Mfr. Part #:
70P03
Package:
TO-252
Product Description
Product Overview
The 70P03 is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed with full function reliability approval.
Product Attributes
- Certifications: RoHS, Green Product
- EAS Guaranteed: 100%
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit | |
| Absolute Maximum Ratings | |||||||
| Drain-Source Voltage | VDS | -30 | V | ||||
| Gate-Source Voltage | VGS | ±20 | V | ||||
| Continuous Drain Current@ -10V, TC=25 | ID | -70 | A | ||||
| Continuous Drain Current@ -10V, TC=75 | ID | -42 | A | ||||
| Pulsed Drain Current | IDM | -175 | A | ||||
| Single Pulse Avalanche Energy | EAS | 31 | mJ | ||||
| Avalanche Current | IAS | -25 | A | ||||
| Total Power Dissipation, TC=25 | PD | 31.2 | W | ||||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | +150 | °C | |||
| Thermal Characteristics | |||||||
| Thermal Resistance from Junction-to-Ambient | RθJA | 43 | °C/W | ||||
| Thermal Resistance from Junction-to-Case | RθJC | 4 | °C/W | ||||
| Electrical Characteristics | |||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = -250µA | -30 | V | |||
| Gate-body Leakage current | IGSS | VDS = 0V, VGS = ±20V | ±100 | nA | |||
| Zero Gate Voltage Drain Current | IDSS | VDS = -24V, VGS = 0V, TJ=25 | -1 | µA | |||
| Zero Gate Voltage Drain Current | IDSS | VDS = -24V, VGS = 0V, TJ=55 | -5 | µA | |||
| Gate-Threshold Voltage | VGS(th) | VDS = VGS, ID = -250µA | -1.0 | -1.6 | -2.5 | V | |
| Drain-Source On-Resistance | RDS(on) | VGS = -10V, ID = -12A | 5.4 | 7 | mΩ | ||
| Drain-Source On-Resistance | RDS(on) | VGS = -4.5V, ID = -8A | 7 | 10 | mΩ | ||
| Forward Transconductance | gfs | VDS = -5V, ID = -20A | 28 | S | |||
| Dynamic Characteristics | |||||||
| Input Capacitance | Ciss | VDS = -15V, VGS =0V, f =1MHz | 4320 | pF | |||
| Output Capacitance | Coss | VDS = -15V, VGS =0V, f =1MHz | 529 | pF | |||
| Reverse Transfer Capacitance | Crss | VDS = -15V, VGS =0V, f =1MHz | 487 | pF | |||
| Switching Characteristics | |||||||
| Gate Resistance | Rg | VDS = 0V, VGS= 0V, f=1.0MHz | 4.0 | Ω | |||
| Total Gate Charge | Qg | VGS = -10V, VDS = -15V, ID= -15A | 45 | nC | |||
| Gate-Source Charge | Qgs | VGS = -10V, VDS = -15V, ID= -15A | 8.5 | ||||
| Gate-Drain Charge | Qgd | VGS = -10V, VDS = -15V, ID= -15A | 12.8 | ||||
| Turn-On Delay Time | td(on) | VGS = -10V, VDD = -15V, RG = 2.5Ω, ID= -15A | 18.9 | nS | |||
| Rise Time | tr | VGS = -10V, VDD = -15V, RG = 2.5Ω, ID= -15A | 15.7 | ||||
| Turn-Off Delay Time | td(off) | VGS = -10V, VDD = -15V, RG = 2.5Ω, ID= -15A | 64.8 | ||||
| Fall Time | tf | VGS = -10V, VDD = -15V, RG = 2.5Ω, ID= -15A | 36.5 | ||||
| Drain-Source Body Diode Characteristics | |||||||
| Diode Forward Voltage | VSD | IS = -1A, VGS = 0V | -1 | V | |||
| Continuous Source Current | IS | VG=VD=0V, Force Current | -80 | A | |||
2412021740_GOODWORK-70P03_C42402300.pdf
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