Power Transistor GOODWORK DMG1013T Featuring P Channel Technology and Enhanced Switching Performance

Key Attributes
Model Number: DMG1013T
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
700mA
RDS(on):
400mΩ@4.5V
Operating Temperature -:
-65℃~+150℃
Gate Threshold Voltage (Vgs(th)):
600mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
6.5pF
Number:
1 P-Channel
Output Capacitance(Coss):
15pF
Pd - Power Dissipation:
312mW
Input Capacitance(Ciss):
40pF
Gate Charge(Qg):
1nC@4.5V
Mfr. Part #:
DMG1013T
Package:
SOT-523
Product Description

Product Overview

These P-Channel enhancement mode power field effect transistors utilize advanced trench DMOS technology, optimized for minimal on-state resistance, superior switching performance, and high energy pulse withstand capability in avalanche and commutation modes. They are well-suited for high efficiency, fast switching applications, including notebook load switches, battery protection, and hand-held instruments. Key features include suitability for -1.8V gate drive applications, improved dv/dt capability, and fast switching characteristics. A green device version is available.

Product Attributes

  • Brand: DMG
  • Model: DMG1013T
  • Technology: Trench DMOS
  • Certifications: Green Device Available

Technical Specifications

SymbolParameterConditionsMin.Typ.Max.Unit
BVDSSDrain-Source Breakdown VoltageVGS=0V , ID=-250uA-20------V
BVDSS/TJBVDSS Temperature CoefficientReference to 25 , ID=-1mA----0.01---V/
IDSSDrain-Source Leakage CurrentVDS=-20V , VGS=0V , TJ=25-------1uA
IDSSDrain-Source Leakage CurrentVDS=-16V , VGS=0V , TJ=125-------10uA
IGSSGate-Source Leakage CurrentVGS=8V , VDS=0V------20uA
RDS(ON)Static Drain-Source On-ResistanceVGS=-4.5V , ID=-0.5A---400560m
RDS(ON)Static Drain-Source On-ResistanceVGS=-2.5V , ID=-0.4A---550780m
RDS(ON)Static Drain-Source On-ResistanceVGS=-1.8V , ID=-0.1A---650950m
VGS(th)Gate Threshold VoltageVGS=VDS , ID =-250uA-0.3-0.6-1.0V
VGS(th)VGS(th) Temperature Coefficient---3---mV/
QgTotal Gate ChargeVDS=-10V , VGS=-4.5V , ID=-0.2A---1---nC
QgsGate-Source Charge---0.28---
QgdGate-Drain Charge---0.18---
Td(on)Turn-On Delay TimeVDD=-10V , VGS=-4.5V , RG=10 D=-0.2A---8---ns
TrRise Time---5.2---ns
Td(off)Turn-Off Delay Time---30---ns
TfFall Time---18---ns
CissInput CapacitanceVDS=-10V , VGS=0V , F=1MHz---40---pF
CossOutput Capacitance---15---pF
CrssReverse Transfer Capacitance---6.5---pF
ISContinuous Source CurrentVG=VD=0V , Force Current-------0.7A
ISMPulsed Source Current-------1.4A
VSDDiode Forward VoltageVGS=0V , IS=-0.2A , TJ=25-------1.2V
VDSDrain-Source Voltage-20------V
VGSGate-Source Voltage8------V
IDDrain Current Continuous(TC=25)----700---mA
IDDrain Current Continuous(TC=100)----250---mA
IDMDrain Current Pulsed----2.1---A
PDPower Dissipation(TC=25)---312---mW
PDPower Dissipation Derateabove 25---2.5---mW/
TSTGStorage Temperature Range-55---150
TJOperating Junction Temperature Range-55---150
RJAThermal Resistance Junction to ambient------400/W

2505161700_GOODWORK-DMG1013T_C48935694.pdf

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