Trenched P channel MOSFET GOODWORK SI2319 optimized for small power switching and load switch tasks
Key Attributes
Model Number:
SI2319
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
4A
RDS(on):
125mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
42pF
Number:
1 P-Channel
Output Capacitance(Coss):
50pF
Pd - Power Dissipation:
1.2W
Input Capacitance(Ciss):
553pF
Gate Charge(Qg):
11.8nC@10V
Mfr. Part #:
SI2319
Package:
SOT-23
Product Description
Product Overview
The SI2319 is a high cell density trenched P-channel MOSFET featuring excellent RDSON and efficiency. It is designed for most small power switching and load switch applications. The SI2319 meets RoHS and Green Product requirements and has full function reliability approval. It is a Green Device Available with super low gate charge and excellent CdV/dt effect decline, utilizing advanced high cell density trench technology.
Product Attributes
- Brand: DEMACHELL
- Certifications: RoHS, Green Product
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS= 0V, ID= -250A | -40 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS= -40V, VGS= 0V | - | - | -1 | A |
| Gate-Body Leakage | IGSS | VDS= 0V, VGS= 20V | - | - | 100 | nA |
| Gate-Threshold Voltage | VGS(th) | VDS= VGS, ID= -250A | -1.2 | -1.5 | -2.5 | V |
| Drain-Source on-Resistance | RDS(on) | VGS= -10V,ID= -5A | - | 63 | 85 | m |
| Drain-Source on-Resistance | RDS(on) | VGS= -4.5V,ID= -4A | - | 80 | 125 | m |
| Input Capacitance | Ciss | VGS = 0V ,VDS = -20V, f=1.0MHz | - | 553 | - | pF |
| Output Capacitance | Coss | VGS = 0V ,VDS = -20V, f=1.0MHz | - | 50 | - | pF |
| Reverse Transfer Capacitance | Crss | VGS = 0V ,VDS = -20V, f=1.0MHz | - | 42 | - | pF |
| Total Gate Charge | Qg | VGS= -10V ,VDS= -20V, ID= -5A | - | 11.8 | - | nC |
| Gate-Source Charge | Qgs | VGS= -10V ,VDS= -20V, ID= -5A | - | 2.2 | - | - |
| Gate-Drain Charge | Qg | VGS= -10V ,VDS= -20V, ID= -5A | - | 3 | - | - |
| Turn-on Delay Time | td(on) | VDS= -20V, VGS= -10V RL= 2.5, RG= 3 | - | 7 | - | ns |
| Rise Time | tr | VDS= -20V, VGS= -10V RL= 2.5, RG= 3 | - | 6.5 | - | ns |
| Turn-off Delay Time | td(off) | VDS= -20V, VGS= -10V RL= 2.5, RG= 3 | - | 24 | - | ns |
| Fall Time | tf | VDS= -20V, VGS= -10V RL= 2.5, RG= 3 | - | 7.8 | - | ns |
| Body Diode voltage | VSD | IS= -5A,VGS=0V | - | - | -1.2 | V |
| Continuous Source Current | IS | - | - | - | -4 | A |
| Drain-Source Voltage | VDS | - | -40 | - | - | V |
| Gate-Source Voltage | VGS | - | - | - | 20 | V |
| Continuous Drain Current | ID | TA = 25C | - | - | -4 | A |
| Pulsed Drain Current | IDM | - | - | - | -20 | A |
| Power Dissipation | PD | TA = 25C | - | - | 1.2 | W |
| Operating Junction and Storage Temperature Range | TJ ,TSTG | - | -55 | - | 150 | C |
| Thermal Resistance from Junction to Ambient | RJA | 2 | - | 104 | - | C/W |
2411081754_GOODWORK-SI2319_C42186046.pdf
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