Voltage Regulating Zener Diode GOODWORK 1SMB5918B with 5.1 Volt Nominal Voltage and SMB Surface Mount Package
Key Attributes
Model Number:
1SMB5918B
Product Custom Attributes
Operating Junction Temperature Range:
-65℃~+150℃
Impedance(Zzt):
4Ω
Diode Configuration:
Independent
Zener Voltage(Range):
4.84V~5.38V
Pd - Power Dissipation:
550mW
Zener Voltage(Nom):
5.1V
Impedance(Zzk):
250Ω
Mfr. Part #:
1SMB5918B
Package:
DO-214AA(SMB)
Product Description
Product Overview
The 1SMB5913B THRU 1SMB5956B series are surface mount power voltage-regulating diodes designed for a wide zener reverse voltage range from 3.3V to 200V. These diodes feature a total power dissipation of up to 2W and are housed in a small plastic package suitable for surface-mounted designs. They are ideal for various voltage regulation applications requiring robust performance in a compact form factor.
Product Attributes
- Case: SMB
- Terminals: Solderable per MIL-STD-750, Method 2026
- Approx. Weight: 0.095g / 0.0034oz
Technical Specifications
| Type | Nominal Zener Voltage Vz (V) | IZT (mA) | ZZT @ IZT () | IR @ VR (A) | IZM (mA)(DC) | VF @ IF (V) |
| 1SMB5913B | 3.3 | 10 | 113.6 | 100 | 1.5 | 1.2 |
| 1SMB5914B | 3.6 | 10 | 104.2 | 75 | 1.5 | 1.2 |
| 1SMB5915B | 3.9 | 10 | 96.1 | 25 | 1.5 | 1.2 |
| 1SMB5916B | 4.3 | 10 | 87.2 | 5 | 1.5 | 1.2 |
| 1SMB5917B | 4.7 | 10 | 79.8 | 5 | 1.5 | 1.2 |
| 1SMB5918B | 5.1 | 10 | 73.5 | 5 | 1.5 | 1.2 |
| 1SMB5919B | 5.6 | 10 | 66.9 | 5 | 1.5 | 1.2 |
| 1SMB5920B | 6.2 | 10 | 60.5 | 5 | 1.5 | 1.2 |
| 1SMB5921B | 6.8 | 10 | 55.1 | 5 | 1.5 | 1.2 |
| 1SMB5922B | 7.5 | 10 | 50 | 5 | 1.5 | 1.2 |
| 1SMB5923B | 8.2 | 10 | 45.7 | 5 | 1.5 | 1.2 |
| 1SMB5924B | 9.1 | 10 | 41.2 | 5 | 1.5 | 1.2 |
| 1SMB5925B | 10 | 10 | 37.5 | 5 | 1.5 | 1.2 |
| 1SMB5926B | 11 | 10 | 34.1 | 5 | 1.5 | 1.2 |
| 1SMB5927B | 12 | 10 | 31.2 | 5 | 1.5 | 1.2 |
| 1SMB5928B | 13 | 10 | 28.8 | 5 | 1.5 | 1.2 |
| 1SMB5929B | 15 | 10 | 25 | 5 | 1.5 | 1.2 |
| 1SMB5930B | 16 | 10 | 23.4 | 5 | 1.5 | 1.2 |
| 1SMB5931B | 18 | 10 | 20.8 | 5 | 1.5 | 1.2 |
| 1SMB5932B | 20 | 10 | 18.7 | 5 | 1.5 | 1.2 |
| 1SMB5933B | 22 | 10 | 17 | 5 | 1.5 | 1.2 |
| 1SMB5934B | 24 | 10 | 15.6 | 5 | 1.5 | 1.2 |
| 1SMB5935B | 27 | 10 | 13.9 | 5 | 1.5 | 1.2 |
| 1SMB5936B | 30 | 10 | 12.5 | 5 | 1.5 | 1.2 |
| 1SMB5937B | 33 | 10 | 11.4 | 5 | 1.5 | 1.2 |
| 1SMB5938B | 36 | 10 | 10.4 | 5 | 1.5 | 1.2 |
| 1SMB5939B | 39 | 10 | 9.6 | 5 | 1.5 | 1.2 |
| 1SMB5940B | 43 | 10 | 8.7 | 5 | 1.5 | 1.2 |
| 1SMB5941B | 47 | 10 | 8 | 5 | 1.5 | 1.2 |
| 1SMB5942B | 51 | 10 | 7.3 | 5 | 1.5 | 1.2 |
| 1SMB5943B | 56 | 10 | 6.7 | 5 | 1.5 | 1.2 |
| 1SMB5944B | 62 | 10 | 6 | 5 | 1.5 | 1.2 |
| 1SMB5945B | 68 | 10 | 5.5 | 5 | 1.5 | 1.2 |
| 1SMB5946B | 75 | 10 | 5 | 5 | 1.5 | 1.2 |
| 1SMB5947B | 82 | 10 | 4.6 | 5 | 1.5 | 1.2 |
| 1SMB5948B | 91 | 10 | 4.1 | 5 | 1.5 | 1.2 |
| 1SMB5949B | 100 | 10 | 3.7 | 5 | 1.5 | 1.2 |
| 1SMB5950B | 110 | 10 | 3.4 | 5 | 1.5 | 1.2 |
| 1SMB5951B | 120 | 10 | 3.1 | 5 | 1.5 | 1.2 |
| 1SMB5952B | 130 | 10 | 2.9 | 5 | 1.5 | 1.2 |
| 1SMB5953B | 150 | 10 | 2.5 | 5 | 1.5 | 1.2 |
| 1SMB5954B | 160 | 10 | 2.3 | 5 | 1.5 | 1.2 |
| 1SMB5955B | 180 | 10 | 2.1 | 5 | 1.5 | 1.2 |
| 1SMB5956B | 200 | 10 | 1.9 | 5 | 1.5 | 1.2 |
2408021729_GOODWORK-1SMB5918B_C2922205.pdf
Related Products
High surge current fast recovery rectifier diode ZHIDE MURS220 with plastic molded epoxy UL 94V 0 flame retardant
Product OverviewThe MURS220-MURS2100 series are plastic encapsulated epitaxial fast recovery rectifier diodes designed for high-reliability applications. They feature low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering (260/10 seconds). The ...
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
