switching MOSFET GOODWORK IRF640 with low thermal resistance and high continuous drain current rating
Product Overview
The IRF640 is a third-generation HEXFET MOSFET from International Rectifier, designed for cost-effectiveness and superior performance. It offers a combination of fast switching, ruggedized design, low on-resistance, and low thermal resistance, making it suitable for power dissipation levels up to approximately 50 watts. The TO-220-3L package is widely adopted in commercial and industrial applications.
Product Attributes
- Brand: International Rectifier
- Product Type: MOSFET (N-Channel)
- Package: TO-220AB
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Continuous Drain Current | ID | VGS @ 10 V | 18 | A | ||
| Power Dissipation | PD | W | ||||
| Linear Derating Factor | 1.0 | W/ | ||||
| Gate-Source Voltage | VGS | 20 | V | |||
| Single Pulse Avalanche Energy | EAS | (note 1) | 580 | mJ | ||
| Thermal Resistance Junction to Ambient | RJA | 62.5 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | +150 | |||
| Drain-source breakdown voltage | V(BR)DSS | VGS=0V,ID=250A | 200 | V | ||
| Gate-threshold voltage | V(GS)th | VDS=VGS, ID=250A | 2 | 4 | V | |
| Gate-body leakage | lGSS | VDS=0V, VGS=20V | 100 | nA | ||
| Zero gate voltage drain current | IDSS | VDS=200V, VGS=0V | 25 | A | ||
| Drain-source on-resistance | RDS(on) | VGS=10V, ID=11A (note 2) | 0.18 | |||
| Forward transconductance | gfs | VDS=50V, ID=11A (note 2) | 6.7 | S | ||
| Diode forward voltage | VSD | IS=18A, VGS=0V (note 2) | 2 | V | ||
| Input capacitance | Ciss | VDS=25V, VGS=0V,f=1MHz (note 3) | 1300 | pF | ||
| Output capacitance | Coss | VDS=25V, VGS=0V,f=1MHz (note 3) | 400 | pF | ||
| Reverse transfer capacitance | Crss | VDS=25V, VGS=0V,f=1MHz (note 3) | 120 | pF | ||
| Turn-on time | td(on) | VDD=100V,RD=5.4, ID=18A, RG=9.1 (note 2,3) | 14 | ns | ||
| Rise time | tr | VDD=100V,RD=5.4, ID=18A, RG=9.1 (note 2,3) | 51 | ns | ||
| Turn-off time | td(off) | VDD=100V,RD=5.4, ID=18A, RG=9.1 (note 2,3) | 45 | ns | ||
| Fall time | tf | VDD=100V,RD=5.4, ID=18A, RG=9.1 (note 2,3) | 36 | ns |
2410121928_GOODWORK-IRF640_C17702911.pdf
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