Dual N Channel Power MOSFET GOODWORK 8205A with Low Gate Charge and High Current Handling Capability
Key Attributes
Model Number:
8205A
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
5A
RDS(on):
25mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Reverse Transfer Capacitance (Crss@Vds):
125pF
Number:
2 N-Channel
Output Capacitance(Coss):
155pF
Input Capacitance(Ciss):
800pF
Gate Charge(Qg):
11nC@4.5V
Mfr. Part #:
8205A
Package:
SOT-23-6
Product Description
Product Overview
The 8205A is a Dual N-Channel Power MOSFET featuring TrenchFET technology, offering excellent RDS(on), low gate charge, and high power and current handling capability. It is designed for surface mount applications and is suitable for battery protection, load switching, and power management.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 20 | V | ||
| Zero gate voltage drain current | IDSS | VDS =18V,VGS = 0V | 300 | nA | ||
| Gate-body leakage current | IGSS | VGS =12V, VDS = 0V | 100 | nA | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =250A | 0.4 | V | ||
| Drain-source on-resistance | RDS(on) | VGS =4.5V, ID =4A | 25 | 34 | m | |
| Drain-source on-resistance | RDS(on) | VGS =2.5V, ID =3A | 26 | m | ||
| Forward tranconductance | gFS | VDS =5V, ID =5A | 10 | S | ||
| Diode forward voltage | VSD | IS=1.25A, VGS = 0V | 0.7 | V | ||
| Input Capacitance | Ciss | VDS =10V,VGS =0V,f =1MHz | 800 | pF | ||
| Output Capacitance | Coss | VDS =10V,VGS =0V,f =1MHz | 155 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =10V,VGS =0V,f =1MHz | 125 | pF | ||
| Turn-on delay time | td(on) | VDD=10V,VGS=4V, ID=1A,RGEN=10 | 18 | ns | ||
| Turn-on rise time | tr | VDD=10V,VGS=4V, ID=1A,RGEN=10 | 4.8 | ns | ||
| Turn-off delay time | td(off) | VDD=10V,VGS=4V, ID=1A,RGEN=10 | 43.5 | ns | ||
| Turn-off fall time | tf | VDD=10V,VGS=4V, ID=1A,RGEN=10 | 20 | ns | ||
| Total Gate Charge | Qg | VDS =10V,VGS =4.5V,ID=4A | 11 | nC | ||
| Gate-Source Charge | Qgs | VDS =10V,VGS =4.5V,ID=4A | 2.2 | nC | ||
| Gate-Drain Charge | Qg | VDS =10V,VGS =4.5V,ID=4A | 2.5 | nC | ||
| Continuous Drain Current | ID | Ta=25 unless otherwise specified | 5.0 | A | ||
| Pulsed Drain Current | IDM | Ta=25 unless otherwise specified | 15 | A | ||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Thermal Resistance Junction to Ambient | RJA | Surface Mounted on FR4 board, t10 sec. | 100 | /W | ||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | +150 | |||
| Lead Temperature for Soldering Purposes | TL | 1/8 from case for 10 s | 260 |
2412061650_GOODWORK-8205A_C22470940.pdf
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