Switching and load control applications supported by GOODWORK 30P10 P Channel Enhancement Mode MOSFET
Key Attributes
Model Number:
30P10
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
30A
RDS(on):
95mΩ@10V,8A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
76pF@20V
Number:
1 P-Channel
Input Capacitance(Ciss):
3.029nF@20V
Pd - Power Dissipation:
280W
Gate Charge(Qg):
44.5nC@10V
Mfr. Part #:
30P10
Package:
TO-252
Product Description
Product Overview
The 30P10 is a P-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 4.5V. This device is suitable for battery protection and other switching applications, including brushless motor control and load switching.
Product Attributes
- Product ID: 30P10
- Package: TO-252-3
- Marking: 30P10 YYYY
- Quantity: 2500 PCS
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
| VDS | Drain-Source Voltage | -100 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ -10V | -30 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ -10V | -18 | A | |||
| IDM | Pulsed Drain Current | -90 | A | |||
| EAS | Single Pulse Avalanche Energy | 157.2 | mJ | |||
| IAS | Avalanche Current | -19 | A | |||
| PD@TC=25 | Total Power Dissipation | 280 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| RJA | Thermal Resistance Junction-Ambient | 62.5 | /W | |||
| RJC | Thermal Resistance Junction-Case | 2.3 | /W | |||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -100 | V | ||
| RDS(ON) | Static Drain-Source On-Resistance | VGS=-10V , ID=-10A | 80 | 95 | ||
| RDS(ON) | Static Drain-Source On-Resistance | VGS=-4.5V , ID=-8A | 90 | 115 | V | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.2 | -1.7 | -2.5 | V |
| IDSS | Drain-Source Leakage Current | VDS=-100V , VGS=0V , TJ=25 | -50 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | 100 | nA | ||
| gfs | Forward Transconductance | VDS=-10V , ID=-10A | 24 | S | ||
| Qg | Total Gate Charge | VDS=-50V , VGS=-10V , ID=-20A | 44.5 | nC | ||
| Qgs | Gate-Source Charge | 9.13 | ||||
| Qgd | Gate-Drain Charge | 5.93 | ||||
| Td(on) | Turn-On Delay Time | VDD=-50V , VGS=-10V , RG=3.3 , ID=-10A | 12 | ns | ||
| Tr | Rise Time | 27.4 | ||||
| Td(off) | Turn-Off Delay Time | 79 | ||||
| Tf | Fall Time | 53.6 | ||||
| Ciss | Input Capacitance | VDS=-20V , VGS=0V , f=1MHz | 3029 | pF | ||
| Coss | Output Capacitance | 129 | ||||
| Crss | Reverse Transfer Capacitance | 76 | ||||
| IS | Continuous Source Current | VG=VD=0V , Force Current | -30 | A | ||
| VSD | Diode Forward Voltage | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| trr | Reverse Recovery Time | IF=-8A , di/dt=-100A/s , TJ=25 | 38.7 | nS | ||
| Qrr | Reverse Recovery Charge | 22.4 | nC |
2410121550_GOODWORK-30P10_C5807886.pdf
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