General Purpose PNP Transistor Guangdong Hottech BC857BW Surface Mount Device Complementary to BC847W
Key Attributes
Model Number:
BC857BW
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
150mW
Transition Frequency(fT):
100MHz
Type:
PNP
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Mfr. Part #:
BC857BW
Package:
SOT-323
Product Description
Product Overview
The BC857W is a PNP bipolar transistor designed for automatic insertion, making it ideal for high-volume manufacturing. It is well-suited for general-purpose switching and AF amplifier applications. This surface mount device comes in a SOT-323 package.
Product Attributes
- Complementary to BC847W
- Surface Mount device
- Case: SOT-323
- Case Material: Molded Plastic
- UL flammability Classification Rating: 94V-0
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
|---|---|---|---|---|
| Collector-Base Voltage | VCBO | -50 | V | |
| Collector-Emitter Voltage | VCEO | -45 | V | |
| Emitter-Base Voltage | VEBO | -5 | V | |
| Collector Current | IC | -100 | mA | |
| Collector Power Dissipation | PC | 150 | mW | |
| Junction Temperature | TJ | 150 | C | |
| Storage Temperature | TSTG | -55 ~+150 | C | |
| Collector-base breakdown voltage | V(BR)CBO | -50 | V | IC=-10uAIE=0 |
| Collector-emitter breakdown voltage | V(BR)CEO | -45 | V | IC=-10mAIB=0 |
| Emitter-base breakdown voltage | V(BR)EBO | -5 | V | IE=-1uAIC=0 |
| Collector cut-off current | ICBO | -15 | nA | VCB=-30V, IE=0 |
| DC current gain | hFE | 125-800 | VCE=-5V, IC=-2mA | |
| Collector-emitter saturation voltage | VCE(sat) | -0.65 | V | IC=-100mAIB=-5mA |
| Base-emitter saturation voltage | VBE(sat) | -1.1 | V | IC=-100mAIB=-5mA |
| Transition frequency | fT | 100 | MHz | VCE=-5V,IC=-10mA,f=100MHz |
| Collector output capacitance | Cob | 4.5 | pF | VCB=-10V, f=1MHz |
2410121849_Guangdong-Hottech-BC857BW_C5364245.pdf
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