Plastic Encapsulate Transistor Guangdong Hottech 2SC2712 Low Noise High Gain Electronic Component

Key Attributes
Model Number: 2SC2712
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
150mW
Transition Frequency(fT):
80MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
150mA
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-
Mfr. Part #:
2SC2712
Package:
SOT-23
Product Description

Product Overview

Plastic-Encapsulate Transistors, complementary to 2SA1162, featuring low noise (NF=1 dB Typ, 10dB MAX). Suitable for various electronic applications requiring high gain and low noise characteristics.

Product Attributes

  • Brand: HOTTECH
  • Origin: GUANGDONG
  • Model: 2SC2712

Technical Specifications

ParameterSymbolTest ConditionsMinTypMaxUnit
Collector-Base Breakdown VoltageVCBOIC= 100A, IE=060V
Collector-Emitter Breakdown VoltageVCEOIC=1mA , IB=050V
Emitter-Base Breakdown VoltageVEBOIE= 100A, IC=05V
Collector Current - ContinuousIC150mA
Collector Power DissipationPCTA=25150mW
Junction TemperatureTJ125
Storage TemperatureTstg-55+150
Collector Cut-off CurrentICBVCB= 60 V, IE=00.1A
Emitter Cut-off CurrentIEBVEB=5V, IC=00.1A
DC Current GainhFEVCE=6V, IC=2mA70700
Collector-Emitter Saturation VoltageVCE(sat)IC= 100mA, IB=10mA0.10.25V
Transition FrequencyfTVCE=10V, IC=1mA80MHz
Output CapacitanceCobVCB=10V, IE=0,f=1 MHz2.03.5pF
Noise FigureNFVCE=6V,IC=0.1mA,f=1kH1.010dB
hFE ClassificationMarkingLOLYLGLL
hFE Range70-140120-240200-400350-700

2409302232_Guangdong-Hottech-2SC2712_C181181.pdf

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