Power electronics optimization with GOODWORK 30N06 n channel mosfet featuring high current capacity
Key Attributes
Model Number:
30N06
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
30A
RDS(on):
23mΩ@10V,10A
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Reverse Transfer Capacitance (Crss@Vds):
49pF@30V
Number:
1 N-channel
Input Capacitance(Ciss):
1.355nF@30V
Pd - Power Dissipation:
41.7W
Gate Charge(Qg):
22nC@10V
Mfr. Part #:
30N06
Package:
TO-252
Product Description
Product Overview
The 30N06 is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDSON and gate charge, meeting RoHS and Green Product requirements with 100% EAS guaranteed and full function reliability approval. Key advantages include its fast switching capability, low gate charge, and excellent CdV/dt effect decline due to advanced high cell density trench technology.
Product Attributes
- Green Device Available
- 100% EAS Guaranteed
- RoHS Compliant
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 60 | - | - | V |
| ID | Continuous Drain Current | TC = 25 | - | - | 30 | A |
| ID | Continuous Drain Current | TC = 100 | - | - | 13 | A |
| IDM | Pulsed Drain Current | note1 | - | - | 100 | A |
| EAS | Single Pulsed Avalanche Energy | note2 | - | - | 39 | mJ |
| PD | Power Dissipation | TC = 25 | - | - | 41.7 | W |
| RJC | Thermal Resistance, Junction to Case | - | - | - | 50 | /W |
| TJ, TSTG | Operating and Storage Temperature Range | - | -55 | - | +175 | |
| VGS(th) | Gate-Threshold Voltage | VDS = VGS, ID = 250A | 1.2 | 1.7 | 2.5 | V |
| RDS(on) | Drain-Source on-Resistance | VGS = 10V, ID = 10A | - | 23 | 32 | m |
| RDS(on) | Drain-Source on-Resistance | VGS = 4.5V, ID = 5A | - | 31.5 | 40 | m |
| Ciss | Input Capacitance | VDS = 30V, VGS =0V, f =1MHz | - | 1355 | - | pF |
| Coss | Output Capacitance | - | - | 60 | - | pF |
| Crss | Reverse Transfer Capacitance | - | - | 49 | - | pF |
| Qg | Total Gate Charge | VGS = 10V, VDD = 30V, ID= 10A | - | 22 | - | nC |
| VSD | Diode Forward Voltage | IS = 10A, VGS = 0V | - | - | 1.2 | V |
2408021728_GOODWORK-30N06_C5807887.pdf
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