Voltage Controlled Small Signal MOSFET GOODWORK 7002-2N7002K Plastic Encapsulated with Rugged Design
Key Attributes
Model Number:
7002-2N7002K
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
340mA
Operating Temperature -:
-
RDS(on):
5.3Ω@4.5V,200mA
Gate Threshold Voltage (Vgs(th)):
2.5V@1mA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF
Number:
1 N-channel
Output Capacitance(Coss):
30pF
Input Capacitance(Ciss):
40pF
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
-
Mfr. Part #:
7002-2N7002K
Package:
SOT-23
Product Description
Product Overview
The 2N7002K is a Plastic-Encapsulated MOSFET designed for voltage-controlled small signal switching. It features a high-density cell design for low RDS(ON), offering a rugged and reliable solution with high saturation current capability. This MOSFET is suitable for various applications requiring efficient switching.
Product Attributes
- Marking Type number: 2N7002K
- Marking code: 7002
- Package: SOT-23
- Technology: Plastic-Encapsulate MOSFETS
Technical Specifications
| Symbol | Parameter | Test Condition | Min | Typ | Max | Units |
| MOSFET MAXIMUM RATINGS (Ta = 25C unless otherwise noted) | ||||||
| VDS | Drain-Source voltage | 60 | V | |||
| ID | Drain Current | 340 | mA | |||
| PD | Power Dissipation | 0.35 | W | |||
| TJ | Junction Temperature | 150 | ||||
| Tstg | Storage Temperature | -55 | 150 | |||
| RJA | Thermal Resistance from Junction to Ambient | 357 | /W | |||
| VGS | Gate-Source voltage | 20 | V | |||
| MOSFET ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) | ||||||
| VDS | Drain-Source Breakdown Voltage | VGS = 0V, ID =250A | 60 | V | ||
| VGS(th) | Gate Threshold Voltage* | VDS =VGS, ID =1mA | 1 | 2.5 | V | |
| IDSS | Zero Gate Voltage Drain Current | VDS =48V,VGS = 0V | 1 | A | ||
| IGSS1 | Gate Source leakage current | VGS =20V, VDS = 0V | 10 | A | ||
| IGSS2 | Gate Source leakage current | VGS =10V, VDS = 0V | 200 | nA | ||
| IGSS3 | Gate Source leakage current | VGS =5V, VDS = 0V | 100 | nA | ||
| RDS(on) | Drain-Source On-Resistance* | VGS = 4.5V, ID =200mA | 5.3 | |||
| RDS(on) | Drain-Source On-Resistance* | VGS =10V,ID =500mA | 5 | |||
| VSD | Diode Forward Voltage | VGS=0V, IS=300mA | 1.5 | V | ||
| Qr | Recovered charge | VGS=0V,IS=300mA,VR=25V, dls/dt=-100A/S | 30 | nC | ||
| Dynamic Characteristics** | ||||||
| Ciss | Input Capacitance | 40 | pF | |||
| Coss | Output Capacitance | 30 | pF | |||
| Crss | Reverse Transfer Capacitance | VDS =10V,VGS =0V,f =1MHz | 10 | pF | ||
| Switching Characteristics** | ||||||
| td(on) | Turn-On Delay Time | 10 | ns | |||
| td(off) | Turn-Off Delay Time | VGS=10V,VDD=50V,RG=50, RGS=50, RL=250 | 15 | ns | ||
| trr | Reverse recovery Time | VGS=0V,IS=300mA,VR=25V, dls/dt=-100A/S | 30 | ns | ||
| GATE-SOURCE ZENER DIODE | ||||||
| BVGSO | Gate-Source Breakdown Voltage | Igs=1mA (Open Drain) | 21.5 | 30 | V | |
2410121521_GOODWORK-7002-2N7002K_C17702881.pdf
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