N Channel MOSFET GOODWORK BSS123W Featuring Rugged Design and Low On Resistance for Switching Circuits
Key Attributes
Model Number:
BSS123W
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
170mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.8Ω@4.5V,170mA
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
2pF@25V
Output Capacitance(Coss):
10pF
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
29pF@25V
Gate Charge(Qg):
1.4nC@10V
Mfr. Part #:
BSS123W
Package:
SOT-323
Product Description
Product Overview
The BSS123W is an N-Channel MOSFET featuring a surface mount package and a high-density cell design for extremely low RDS(ON). It serves as a voltage-controlled small signal switch, offering ruggedness and reliability. This MOSFET is suitable for applications such as small servo motor controls, power MOSFET gate drivers, and general switching applications.
Product Attributes
- Package: SOT-323
- Marking: K23
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 100 | V | ||
| Zero gate voltage drain current | IDSS | VDS =100V,VGS = 0V | 1 A | |||
| Zero gate voltage drain current | IDSS | VDS =20V,VGS = 0V | 10 | nA | ||
| Gate-body leakage current | IGSS | VGS =20V, VDS = 0V | 50 | nA | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =250A | 1 | 2.8 | V | |
| Drain-source on-resistance | RDS(on) | VGS =4.5V, ID =0.17A | 10 | |||
| Drain-source on-resistance | RDS(on) | VGS =10V, ID =0.17A | 6 | |||
| Forward tranconductance | gFS | VDS =10V, ID =170mA | 80 | mS | ||
| Diode forward voltage | VSD | IS=340mA, VGS = 0V | 1.3 | V | ||
| Input Capacitance | Ciss | VDS =25V,VGS =0V,f =1MHz | 29 | 60 | pF | |
| Output Capacitance | Coss | VDS =25V,VGS =0V,f =1MHz | 10 | 15 | pF | |
| Reverse Transfer Capacitance | Crss | VDS =25V,VGS =0V,f =1MHz | 2 | 6 | pF | |
| Turn-on delay time | td(on) | VGS=10V,VDD=30V, ID=2.8A,RGEN=50 | 8 | ns | ||
| Turn-on rise time | tr | VGS=10V,VDD=30V, ID=2.8A,RGEN=50 | 8 | ns | ||
| Turn-off delay time | td(off) | VGS=10V,VDD=30V, ID=2.8A,RGEN=50 | 13 | ns | ||
| Turn-off fall time | tf | VGS=10V,VDD=30V, ID=2.8A,RGEN=50 | 16 | ns | ||
| Total Gate Charge | Qg | VDS=10V,ID=0.22A, VGS=10V | 1.4 | 2 | nC | |
| Gate-Source Charge | Qgs | VDS=10V,ID=0.22A, VGS=10V | 0.15 | 0.25 | nC | |
| Gate-Drain Charge | Qgd | VDS=10V,ID=0.22A, VGS=10V | 0.2 | 0.4 | nC |
2508071805_GOODWORK-BSS123W_C50176571.pdf
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