GOODWORK 3134K GK N Channel MOSFET with Low Logic Level Gate Drive and Surface Mount SOT 723 Package
Key Attributes
Model Number:
3134K-GK
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
750mA
RDS(on):
270mΩ@4.5V;320mΩ@2.5V;390mΩ@1.8V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
540mV@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
9pF
Output Capacitance(Coss):
13pF
Input Capacitance(Ciss):
79pF
Pd - Power Dissipation:
150mW
Mfr. Part #:
3134K-GK
Package:
SOT-723
Product Description
Product Overview
This N-Channel MOSFET is designed for ultra-small portable electronics, offering low RDS(on) and low logic level gate drive. It is ideal for load/power switching, interfacing, switching, and battery management applications. Features include a lead-free product and a surface mount SOT-723 package.
Product Attributes
- Package: SOT-723
- Lead Free: Yes
- Product Type: N-Channel Switch
- Marking: KF
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Typical Gate-Source Voltage | VGS | ±12 | V | |||
| Continuous Drain Current | ID | (note 1) | 0.75 | A | ||
| Pulsed Drain Current | IDM | (tp=10μs) | 1.8 | A | ||
| Power Dissipation | PD | (note 1) | 150 | mW | ||
| Thermal Resistance from Junction to Ambient | RθJA | (note 1) | 833 | ℃/W | ||
| Operation Junction and Storage Temperature Range | TJ,TSTG | -55 | +150 | ℃ | ||
| Lead Temperature for Soldering Purposes | TL | (1/8” from case for 10 s) | 260 | ℃ | ||
| Static Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250μA | 20 | V | ||
| Zero gate voltage drain current | IDSS | VDS =20V,VGS = 0V | 1 | μA | ||
| Gate-body leakage current | IGSS | VGS =±10V, VDS = 0V | ±20 | μA | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =250μA (note 2) | 0.35 | 0.54 | 1.1 | V |
| Drain-source on-resistance | RDS (on) | VGS =4.5V, ID =0.65A (note 2) | 270 | 380 | m℉ | |
| VGS =2.5V, ID =0.55A (note 2) | 320 | 450 | m℉ | |||
| VGS =1.8V, ID =0.45A (note 2) | 390 | 800 | m℉ | |||
| Forward transconductance | gFS | VDS =10V, ID =0.8A (note 2) | 1.6 | S | ||
| Diode forward voltage | VSD | IS=0.15A, VGS = 0V | 1.2 | V | ||
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS =16V,VGS =0V,f =1MHz (note 4) | 79 | 120 | pF | |
| Output capacitance | Coss | VDS =16V,VGS =0V,f =1MHz (note 4) | 13 | 20 | pF | |
| Reverse transfer capacitance | Crss | VDS =16V,VGS =0V,f =1MHz (note 4) | 9 | 15 | pF | |
| Switching Characteristics | ||||||
| Turn-on delay time | td(on) | VGS=4.5V,VDS=10V, ID =500mA,RGEN=10℉ (note 3) | 6.7 | ns | ||
| Turn-on rise time | tr | VGS=4.5V,VDS=10V, ID =500mA,RGEN=10℉ (note 3) | 4.8 | ns | ||
| Turn-off delay time | td(off) | VGS=4.5V,VDS=10V, ID =500mA,RGEN=10℉ (note 3) | 17.3 | ns | ||
| Turn-off fall time | tf | VGS=4.5V,VDS=10V, ID =500mA,RGEN=10℉ (note 3) | 7.4 | ns | ||
| Total Gate Charge | ||||||
| Total Gate Charge | Qg | VDS =10V,VGS =4.5V,ID =0.25A (note 3) | 750 | pC | ||
| Gate-Source Charge | Qgs | VDS =10V,VGS =4.5V,ID =0.25A (note 3) | 75 | pC | ||
| Gate-Drain Charge | Qgd | VDS =10V,VGS =4.5V,ID =0.25A (note 3) | 225 | pC | ||
2506241550_GOODWORK-3134K-GK_C49247850.pdf
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