electronic switching component Guangdong Hottech 1N4448WS diode featuring fast switching speed and molded plastic case
Key Attributes
Model Number:
1N4448WS
Product Custom Attributes
Reverse Leakage Current (Ir):
2.5uA
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Recovery Time (trr):
4ns
Voltage - DC Reverse (Vr) (Max):
75V
Pd - Power Dissipation:
200mW
Voltage - Forward(Vf@If):
1V@100mA
Current - Rectified:
250mA
Mfr. Part #:
1N4448WS
Package:
SOD-323
Product Description
Product Overview
The 1N4448WS is a high-speed switching diode designed for general-purpose applications. It features fast switching speeds, low reverse current, and a surface-mount SOD-323 package, making it suitable for various electronic circuits requiring efficient switching.
Product Attributes
- Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
- Origin: China
- Case Material: Molded Plastic
- UL Flammability Classification: 94V-0
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
|---|---|---|---|---|
| Maximum Ratings | VRM | 100 | V | Non-Repetitive Peak Reverse Voltage |
| VR | 75 | V | DC Blocking Reverse Voltage | |
| VR(RMS) | 53 | V | RMS Reverse Voltage | |
| IF | 500 | mA | Forward Current | |
| IO | 250 | mA | Average Rectified Output Current | |
| IFSM | 2.0 | A | Non-Repetitive Peak Forward Surge Current @t=8.3ms | |
| PD | 200 | mW | Power Dissipation | |
| TJ | 150 | C | Junction Temperature | |
| TSTG | -55 ~+150 | C | Storage Temperature | |
| Electrical Characteristics | VF | 1 | V | IF=100mA |
| VR | 75 | V | IR=10uA | |
| IR | 2.5 | uA | VR=75V | |
| CD | 4 | pF | VR=0V,f=1MHz | |
| Trr | 4 | nS | IF=IR=10mA, Irr=0.1IR, RL=100 | |
| Thermal Resistance | RJA | 625 | C/W | From Junction To Ambient |
2410122008_Guangdong-Hottech-1N4448WS_C5364253.pdf
Related Products
DO 214AC SMA package SMA4742AQ Zener diode with low profile design and high forward surge capability
Product OverviewThe SMA4735AQ thru SMA4764AQ series are surface mount Zener diodes featuring a low profile package ideal for automated placement. They offer high forward surge capability and meet MSL level 1 standards. The 'Q' suffix indicates AEC-Q101 qualification, making them suitable for ...
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
digital transistor YANGJIE DTA114YE featuring built in resistors designed for automatic insertion and halogen free
Digital Transistors (Built-in Resistors)The DTA114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It offers moisture sensitivity level 1 and is halogen-free, making it a reliable choice for various electronic ...
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
