Trench DMOS N Channel MOSFET GOODWORK BSS138W designed for fast switching and energy pulse withstand
Key Attributes
Model Number:
BSS138W
Product Custom Attributes
Drain To Source Voltage:
55V
Current - Continuous Drain(Id):
300mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.2Ω@10V
Gate Threshold Voltage (Vgs(th)):
1.1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF@30V
Number:
1 N-channel
Pd - Power Dissipation:
313mW
Input Capacitance(Ciss):
23pF@30V
Gate Charge(Qg):
1.1nC@10V
Mfr. Part #:
BSS138W
Package:
SOT-323
Product Description
Product Overview
These N-Channel enhancement mode power field effect transistors utilize advanced trench DMOS technology, offering minimized on-state resistance, superior switching performance, and high energy pulse withstand capability in avalanche and commutation modes. They are well-suited for high efficiency fast switching applications, including notebook load switches, battery protection, and hand-held instruments.
Product Attributes
- Brand: BSS138W
- Device Type: N-Channel MOSFET
- Technology: Trench DMOS
- Features: Improved dv/dt capability, Fast switching, Green Device Available
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 55 | --- | --- | V |
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25 , ID=1mA | --- | 0.05 | --- | V/ |
| IDSS | Drain-Source Leakage Current | VDS=48V , VGS=0V , TJ=25 | --- | --- | 1 | uA |
| IDSS | Drain-Source Leakage Current | VDS=55V , VGS=0V , TJ=85 | --- | --- | 400 | nA |
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | --- | 6 | uA |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V , ID=0.3A | --- | 1.2 | 1.5 | |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=4.5V , ID=0.2A | --- | 1.5 | 2.3 | V |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 0.8 | 1.1 | 1.6 | V |
| VGS(th) | VGS(th) Temperature Coefficient | --- | 3 | --- | mV/ | |
| Ciss | Input Capacitance | VDS=30V , VGS=0V , F=1MHz | --- | 23 | --- | pF |
| Coss | Output Capacitance | --- | 16 | --- | pF | |
| Crss | Reverse Transfer Capacitance | --- | 10 | --- | pF | |
| ID | Drain Current Continuous (TA=25) | --- | --- | 300 | mA | |
| ID | Drain Current Continuous (TA=70) | --- | --- | 240 | mA | |
| IDM | Drain Current Pulsed | --- | --- | 1.2 | A | |
| PD | Power Dissipation (TA=25) | --- | --- | 313 | mW | |
| TSTG | Storage Temperature Range | -55 | --- | 150 | ||
| TJ | Operating Junction Temperature Range | -55 | --- | 150 | ||
| RJA | Thermal Resistance Junction to ambient | Tc=25 unless otherwise noted | --- | --- | 450 | /W |
| IS | Continuous Source Current | VG=VD=0V , Force Current | --- | --- | 300 | mA |
| ISM | Pulsed Source Current | --- | --- | 600 | mA | |
| VSD | Diode Forward Voltage | VGS=0V , IS=0.3A , TJ=25 | --- | --- | 1.4 | V |
2412161740_GOODWORK-BSS138W_C42414251.pdf
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