N Channel Enhancement Mode MOSFET GOODWORK 2SK3018W Designed for High Energy Pulse and Fast Switching
Key Attributes
Model Number:
2SK3018W
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
250mA
RDS(on):
1.5Ω@10V
Operating Temperature -:
-55℃~+125℃
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
6pF@30V
Number:
1 N-channel
Output Capacitance(Coss):
12pF
Input Capacitance(Ciss):
20pF@30V
Pd - Power Dissipation:
300mW
Mfr. Part #:
2SK3018W
Package:
SOT-323
Product Description
Product Overview
These N-Channel enhancement mode power field effect transistors utilize advanced trench DMOS technology, specifically engineered to minimize on-state resistance, deliver superior switching performance, and provide robust high energy pulse handling in avalanche and commutation modes. They are ideally suited for high efficiency, fast switching applications.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Green Device Available
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 30 | --- | --- | V |
| BVDSS Temperature Coefficient | Reference to 25 , ID=1mA | --- | 0.05 | --- | V/ | |
| VDS=30V , VGS=0V , TJ=50 | --- | --- | 100 | nA | ||
| IDSS | Drain-Source Leakage Current | VDS=30V , VGS=0V , TJ=85 | --- | --- | 400 | nA |
| VGS=20V , VDS=0V | --- | --- | ±6 | uA | ||
| IGSS | Gate-Source Leakage Current | --- | --- | --- | --- | --- |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V , ID=0.3A | --- | 1.5 | 3 | Ω |
| VGS=4.5V , ID=0.2A | --- | 1.6 | 4 | Ω | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 0.8 | 1.1 | 1.6 | V |
| ΔVGS(th) | VGS(th) Temperature Coefficient | --- | --- | 3 | --- | mV/ |
| Ciss | Input Capacitance | VDS=30V , VGS=0V , F=1MHz | --- | 20 | --- | pF |
| Coss | Output Capacitance | --- | --- | 12 | --- | pF |
| Crss | Reverse Transfer Capacitance | --- | --- | 6 | --- | pF |
| IS | Continuous Source Current | VG=VD=0V , Force Current | --- | --- | 250 | mA |
| --- | --- | 500 | mA | |||
| ISM | Pulsed Source Current | --- | --- | --- | --- | --- |
| VSD | Diode Forward Voltage | VGS=0V , IS=0.2A , TJ=25 | --- | --- | 1.2 | V |
2412061650_GOODWORK-2SK3018W_C41399456.pdf
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